Electrical properties and deep trap spectra in Ga2O3 films grown by halide vapor phase epitaxy on p-type diamond substrates

Abstract

Films of Ga2O3 were grown by Halide Vapor Phase Epitaxy (HVPE) on bulk heavily B-doped (001)-oriented diamond substrates using thin interlayers of Al2O3 deposited by HVPE or AlN/AlGaN deposited by metalorganic chemical vapor deposition. The growth with AlN/AlGaN was dominated by the formation of a highly conducting e-phase with poor crystalline quality. For these samples, excessive leakage of Schottky diodes and of the Ga2O3/diamond heterojunction prevented meaningful electrical characterization. The film grown with the Al2O3 interlayer was mainly composed of (-201) beta-Ga2O3 with an admixture of the e-phase. The film had a low density of residual shallow donors, 5 x 10(15 )cm(-3), with deep electron traps spectra consisting of the well documented centers for beta-Ga2O3 near E-c 0.27, E-c 0.7, and E-c 1 eV, all of which are often ascribed to native defects or their complexes. The electrical properties of heterojunctions were mostly determined by the properties of the Ga2O3 films. Both Schottky diodes and heterojunctions showed measurable photosensitivity for 259 nm wavelength excitation, but very low photocurrent for near-UV (365 nm wavelength excitation).