High responsivity solar-blind metal-semiconductor-metal photodetector based on alpha-Ga2O3
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Bae, Jinho | - |
dc.contributor.author | Jeon, Dae-Woo | - |
dc.contributor.author | Park, Ji-Hyeon | - |
dc.contributor.author | Kim, Jihyun | - |
dc.date.accessioned | 2021-11-20T06:40:59Z | - |
dc.date.available | 2021-11-20T06:40:59Z | - |
dc.date.created | 2021-08-30 | - |
dc.date.issued | 2021-05 | - |
dc.identifier.issn | 0734-2101 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/128087 | - |
dc.description.abstract | alpha-Ga2O3, with an ultra-high energy bandgap of 5.1 eV, is an attractive material for applications in solar-blind photodetectors and high-power electronics. We fabricated an alpha-Ga2O3 metal-semiconductor-metal (MSM) interdigitated solar-blind photodetector, where an epitaxial alpha-Ga2O3 thin film was grown on a sapphire substrate using a hydride vapor-phase epitaxy technique. Excellent optoelectronic device properties including high responsivity (4.24 x 10(4) A/W), detectivity (1.77 x 10(11) Jones), and external quantum efficiency (2.07 x 10(5)) were demonstrated in response to ultraviolet (UV) C wavelength. Under sunlight, the alpha-Ga2O3 MSM photodetector exhibited stable solar-blind sensitivity to UVC wavelength without interference from the incoming solar spectrum. Our work proposes that alpha-Ga2O3 has great potential as a next-generation high-performance solar-blind photodetector. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | A V S AMER INST PHYSICS | - |
dc.title | High responsivity solar-blind metal-semiconductor-metal photodetector based on alpha-Ga2O3 | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
dc.identifier.doi | 10.1116/6.0000940 | - |
dc.identifier.scopusid | 2-s2.0-85103765855 | - |
dc.identifier.wosid | 000636468200001 | - |
dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.39, no.3 | - |
dc.relation.isPartOf | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | - |
dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | - |
dc.citation.volume | 39 | - |
dc.citation.number | 3 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.