High responsivity solar-blind metal-semiconductor-metal photodetector based on alpha-Ga2O3
- Authors
- Bae, Jinho; Jeon, Dae-Woo; Park, Ji-Hyeon; Kim, Jihyun
- Issue Date
- 5월-2021
- Publisher
- A V S AMER INST PHYSICS
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.39, no.3
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
- Volume
- 39
- Number
- 3
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/128087
- DOI
- 10.1116/6.0000940
- ISSN
- 0734-2101
- Abstract
- alpha-Ga2O3, with an ultra-high energy bandgap of 5.1 eV, is an attractive material for applications in solar-blind photodetectors and high-power electronics. We fabricated an alpha-Ga2O3 metal-semiconductor-metal (MSM) interdigitated solar-blind photodetector, where an epitaxial alpha-Ga2O3 thin film was grown on a sapphire substrate using a hydride vapor-phase epitaxy technique. Excellent optoelectronic device properties including high responsivity (4.24 x 10(4) A/W), detectivity (1.77 x 10(11) Jones), and external quantum efficiency (2.07 x 10(5)) were demonstrated in response to ultraviolet (UV) C wavelength. Under sunlight, the alpha-Ga2O3 MSM photodetector exhibited stable solar-blind sensitivity to UVC wavelength without interference from the incoming solar spectrum. Our work proposes that alpha-Ga2O3 has great potential as a next-generation high-performance solar-blind photodetector.
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Collections - College of Engineering > Department of Chemical and Biological Engineering > 1. Journal Articles
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