Large-scale synthesis of atomically thin ultrawide bandgap beta-Ga2O3 using a liquid gallium squeezing technique
DC Field | Value | Language |
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dc.contributor.author | Park, Hyunik | - |
dc.contributor.author | Choi, Yongha | - |
dc.contributor.author | Yang, Sujung | - |
dc.contributor.author | Bae, Jinho | - |
dc.contributor.author | Kim, Jihyun | - |
dc.date.accessioned | 2021-11-21T03:40:28Z | - |
dc.date.available | 2021-11-21T03:40:28Z | - |
dc.date.created | 2021-08-30 | - |
dc.date.issued | 2021-05 | - |
dc.identifier.issn | 0734-2101 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/128189 | - |
dc.description.abstract | beta-Ga2O3, an emerging ultrawide bandgap (UWBG) semiconductor, offers promising properties for next-generation power electronics, chemical sensors, and solar-blind optoelectronics. Scaling down of beta-Ga2O3 to the atomic level affords the advantages of two-dimensional (2D) materials, while maintaining the inherent properties of the parent bulk counterpart. Here, we demonstrate a simple approach to synthesize ultrathin millimeter-size beta-Ga2O3 sheets using a liquid gallium squeezing technique. The GaOx nanolayer produced by stamping liquid gallium under the Cabrera-Mott oxidation was converted into few-atom-thick beta-Ga2O3 via thermal annealing under atmospheric conditions. This approach was also applied to various substrates such as SiO2, Si, graphene, quartz, and sapphire to heteroepitaxially synthesize 2D beta-Ga2O3 on a target substrate. Finally, we propose a patterning strategy combining the squeezing technique with conventional lithography to obtain a beta-Ga2O3 layer with a controllable thickness and shape. Our synthetic method has the potential to overcome the limitations of conventional beta-Ga2O3 growth methods, paving a path for applications in UWBG-based (opto-)electronics with a high throughput in a cost-effective manner. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | A V S AMER INST PHYSICS | - |
dc.title | Large-scale synthesis of atomically thin ultrawide bandgap beta-Ga2O3 using a liquid gallium squeezing technique | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
dc.identifier.doi | 10.1116/6.0000927 | - |
dc.identifier.scopusid | 2-s2.0-85103438231 | - |
dc.identifier.wosid | 000635267100001 | - |
dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.39, no.3 | - |
dc.relation.isPartOf | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | - |
dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | - |
dc.citation.volume | 39 | - |
dc.citation.number | 3 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
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