Large-scale synthesis of atomically thin ultrawide bandgap beta-Ga2O3 using a liquid gallium squeezing technique
- Authors
- Park, Hyunik; Choi, Yongha; Yang, Sujung; Bae, Jinho; Kim, Jihyun
- Issue Date
- 5월-2021
- Publisher
- A V S AMER INST PHYSICS
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.39, no.3
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
- Volume
- 39
- Number
- 3
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/128189
- DOI
- 10.1116/6.0000927
- ISSN
- 0734-2101
- Abstract
- beta-Ga2O3, an emerging ultrawide bandgap (UWBG) semiconductor, offers promising properties for next-generation power electronics, chemical sensors, and solar-blind optoelectronics. Scaling down of beta-Ga2O3 to the atomic level affords the advantages of two-dimensional (2D) materials, while maintaining the inherent properties of the parent bulk counterpart. Here, we demonstrate a simple approach to synthesize ultrathin millimeter-size beta-Ga2O3 sheets using a liquid gallium squeezing technique. The GaOx nanolayer produced by stamping liquid gallium under the Cabrera-Mott oxidation was converted into few-atom-thick beta-Ga2O3 via thermal annealing under atmospheric conditions. This approach was also applied to various substrates such as SiO2, Si, graphene, quartz, and sapphire to heteroepitaxially synthesize 2D beta-Ga2O3 on a target substrate. Finally, we propose a patterning strategy combining the squeezing technique with conventional lithography to obtain a beta-Ga2O3 layer with a controllable thickness and shape. Our synthetic method has the potential to overcome the limitations of conventional beta-Ga2O3 growth methods, paving a path for applications in UWBG-based (opto-)electronics with a high throughput in a cost-effective manner.
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Collections - College of Engineering > Department of Chemical and Biological Engineering > 1. Journal Articles
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