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Using Self-Aligned Si Barrier to Enhance the Contrast Ratio and Performance of Pixelated Light Emitting Diode for Vehicle Headlamp

Authors
Lee, Sang-YoulKim, DoyubKang, KimanLee, EundukJo, YoominJung, Se-YeonOh, Jeong TakJeong, Hwan-HeeSeong, Tae-Yeon
Issue Date
1-4월-2021
Publisher
ELECTROCHEMICAL SOC INC
Keywords
LED; light emitting diode; LED; III-Nitrides; LED array; cross-talk; headlamp
Citation
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, v.10, no.4
Indexed
SCIE
SCOPUS
Journal Title
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
Volume
10
Number
4
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/128270
DOI
10.1149/2162-8777/abf47d
ISSN
2162-8769
Abstract
We investigate the effects of pixel distance and light emitting diode (LED) thickness on the luminance distribution and contrast ratio of a 16 x 16 blue and white LED array for vehicle headlamp application. With increasing pixel distance from 10 to 20 mu m, the contrast ratio increased from 33:1 to 51:1 for white LEDs and from 37:1 to 48:1 for blue LEDs. As the LED thickness decreased from 4.5 to 2.0 mu m, the contrast ratio increased from 37:1 to 62:1 for blue LEDs and from 33:1 to 97:1 for white LEDs. The blue LEDs fabricated with ultrathin-GaN and self-aligned Si barrier showed the contrast ratio of 48:1 and 39:1, respectively, while the white LEDs with ultrathin-GaN and self-aligned Si barrier yielded the contrast ratio of and 89:1 and 99:1. Further, LEDs with the self-aligned Si barrier had better luminance uniformity than those with the ultrathin-GaN. LED array with the self-aligned Si barrier exhibited narrower dark space than that with the ultrathin-GaN. At 60 mA, the LED with the self-aligned Si barrier gave 6% higher light output than that with the ultrathin-GaN. A headlamp unit using 16 x 16 LED array was demonstrated with the Si self-aligned barrier.
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SEONG, TAE YEON
공과대학 (신소재공학부)
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