Using Self-Aligned Si Barrier to Enhance the Contrast Ratio and Performance of Pixelated Light Emitting Diode for Vehicle Headlamp
- Authors
- Lee, Sang-Youl; Kim, Doyub; Kang, Kiman; Lee, Eunduk; Jo, Yoomin; Jung, Se-Yeon; Oh, Jeong Tak; Jeong, Hwan-Hee; Seong, Tae-Yeon
- Issue Date
- 1-4월-2021
- Publisher
- ELECTROCHEMICAL SOC INC
- Keywords
- LED; light emitting diode; LED; III-Nitrides; LED array; cross-talk; headlamp
- Citation
- ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, v.10, no.4
- Indexed
- SCIE
SCOPUS
- Journal Title
- ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
- Volume
- 10
- Number
- 4
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/128270
- DOI
- 10.1149/2162-8777/abf47d
- ISSN
- 2162-8769
- Abstract
- We investigate the effects of pixel distance and light emitting diode (LED) thickness on the luminance distribution and contrast ratio of a 16 x 16 blue and white LED array for vehicle headlamp application. With increasing pixel distance from 10 to 20 mu m, the contrast ratio increased from 33:1 to 51:1 for white LEDs and from 37:1 to 48:1 for blue LEDs. As the LED thickness decreased from 4.5 to 2.0 mu m, the contrast ratio increased from 37:1 to 62:1 for blue LEDs and from 33:1 to 97:1 for white LEDs. The blue LEDs fabricated with ultrathin-GaN and self-aligned Si barrier showed the contrast ratio of 48:1 and 39:1, respectively, while the white LEDs with ultrathin-GaN and self-aligned Si barrier yielded the contrast ratio of and 89:1 and 99:1. Further, LEDs with the self-aligned Si barrier had better luminance uniformity than those with the ultrathin-GaN. LED array with the self-aligned Si barrier exhibited narrower dark space than that with the ultrathin-GaN. At 60 mA, the LED with the self-aligned Si barrier gave 6% higher light output than that with the ultrathin-GaN. A headlamp unit using 16 x 16 LED array was demonstrated with the Si self-aligned barrier.
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Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
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