On Relationships between Gas-Phase Chemistry and Reactive Ion Etching Kinetics for Silicon-Based Thin Films (SiC, SiO2 and SixNy) in Multi-Component Fluorocarbon Gas Mixtures
DC Field | Value | Language |
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dc.contributor.author | Efremov, Alexander | - |
dc.contributor.author | Lee, Byung Jun | - |
dc.contributor.author | Kwon, Kwang-Ho | - |
dc.date.accessioned | 2021-11-23T22:40:14Z | - |
dc.date.available | 2021-11-23T22:40:14Z | - |
dc.date.created | 2021-08-30 | - |
dc.date.issued | 2021-03 | - |
dc.identifier.issn | 1996-1944 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/128523 | - |
dc.description.abstract | This work summarizes the results of our previous studies related to investigations of reactive ion etching kinetics and mechanisms for widely used silicon-based materials (SiC, SiO2, and SixNy) as well as for the silicon itself in multi-component fluorocarbon gas mixtures. The main subjects were the three-component systems composed either by one fluorocarbon component (CF4, C4F8, CHF3) with Ar and O-2 or by two fluorocarbon components with one additive gas. The investigation scheme included plasma diagnostics by Langmuir probes and model-based analysis of plasma chemistry and heterogeneous reaction kinetics. The combination of these methods allowed one (a) to figure out key processes which determine the steady-state plasma parameters and densities of active species; (b) to understand relationships between processing conditions and basic heterogeneous process kinetics; (c) to analyze etching mechanisms in terms of process-condition-dependent effective reaction probability and etching yield; and (d) to suggest the set gas-phase-related parameters (fluxes and flux-to-flux ratios) to control the thickness of the fluorocarbon polymer film and the change in the etching/polymerization balance. It was shown that non-monotonic etching rates as functions of gas mixing ratios may result from monotonic but opposite changes in F atoms flux and effective reaction probability. The latter depends either on the fluorocarbon film thickness (in high-polymerizing and oxygen-less gas systems) or on heterogeneous processes with a participation of O atoms (in oxygen-containing plasmas). It was suggested that an increase in O-2 fraction in a feed gas may suppress the effective reaction probability through decreasing amounts of free adsorption sites and oxidation of surface atoms. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | MDPI | - |
dc.title | On Relationships between Gas-Phase Chemistry and Reactive Ion Etching Kinetics for Silicon-Based Thin Films (SiC, SiO2 and SixNy) in Multi-Component Fluorocarbon Gas Mixtures | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kwon, Kwang-Ho | - |
dc.identifier.doi | 10.3390/ma14061432 | - |
dc.identifier.scopusid | 2-s2.0-85103113758 | - |
dc.identifier.wosid | 000640029300001 | - |
dc.identifier.bibliographicCitation | MATERIALS, v.14, no.6 | - |
dc.relation.isPartOf | MATERIALS | - |
dc.citation.title | MATERIALS | - |
dc.citation.volume | 14 | - |
dc.citation.number | 6 | - |
dc.type.rims | ART | - |
dc.type.docType | Review | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Metallurgy & Metallurgical Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Metallurgy & Metallurgical Engineering | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordAuthor | fluorocarbon gas plasma | - |
dc.subject.keywordAuthor | etching kinetics | - |
dc.subject.keywordAuthor | etching mechanism | - |
dc.subject.keywordAuthor | plasma parameters | - |
dc.subject.keywordAuthor | active species | - |
dc.subject.keywordAuthor | polymerization | - |
dc.subject.keywordAuthor | ion-assisted chemical reaction | - |
dc.subject.keywordAuthor | effective reaction probability | - |
dc.subject.keywordAuthor | etching yield | - |
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