Shared-Write-Channel-Based Device for High-Density Spin-Orbit-Torque Magnetic Random-Access Memory
DC Field | Value | Language |
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dc.contributor.author | Mishra, Rahul | - |
dc.contributor.author | Kim, Taehwan | - |
dc.contributor.author | Park, Jongsun | - |
dc.contributor.author | Yang, Hyunsoo | - |
dc.date.accessioned | 2021-11-24T00:43:18Z | - |
dc.date.available | 2021-11-24T00:43:18Z | - |
dc.date.created | 2021-08-30 | - |
dc.date.issued | 2021-02-25 | - |
dc.identifier.issn | 2331-7019 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/128536 | - |
dc.description.abstract | Spin-orbit-torque (SOT) devices are promising candidates for the future magnetic memory landscape, as they promise high endurance, low read disturbance, and low read error, in comparison with spin-transfer torque devices. However, SOT memories are area intensive due to the requirement for two access tran-sistors per bit. Here, we report a multibit SOT cell that has a single write channel shared among multiple bits, which enables an area-efficient memory design by reducing the number of access transistors. All combinations of digital information can be written in the multibit devices with a single current pulse. This functionality is facilitated by the electric field modulation of SOT polarity by tuning the heavy metal-ferromagnet interfacial oxidation state. Centered on the multibit devices, a shared-write-channel (SWC) memory design provides double the device density of current SOT magnetic random-access mem-ory (MRAM). This improvement makes SOT MRAM appealing for its adoption over a wide range of memory hierarchies. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER PHYSICAL SOC | - |
dc.title | Shared-Write-Channel-Based Device for High-Density Spin-Orbit-Torque Magnetic Random-Access Memory | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jongsun | - |
dc.identifier.doi | 10.1103/PhysRevApplied.15.024063 | - |
dc.identifier.scopusid | 2-s2.0-85102410549 | - |
dc.identifier.wosid | 000628653600001 | - |
dc.identifier.bibliographicCitation | PHYSICAL REVIEW APPLIED, v.15, no.2 | - |
dc.relation.isPartOf | PHYSICAL REVIEW APPLIED | - |
dc.citation.title | PHYSICAL REVIEW APPLIED | - |
dc.citation.volume | 15 | - |
dc.citation.number | 2 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
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