Multilevel resistive switching and synaptic plasticity of nanoparticulated cobaltite oxide memristive device
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Dongale, T.D. | - |
dc.contributor.author | Khot, A.C. | - |
dc.contributor.author | Takaloo, A.V. | - |
dc.contributor.author | Son, K.R. | - |
dc.contributor.author | Kim, T.G. | - |
dc.date.accessioned | 2021-12-01T21:41:48Z | - |
dc.date.available | 2021-12-01T21:41:48Z | - |
dc.date.created | 2021-08-31 | - |
dc.date.issued | 2021-07-10 | - |
dc.identifier.issn | 1005-0302 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/128720 | - |
dc.description.abstract | Multilevel resistive switching (RS) is a key property to embrace the full potential of memristive devices for non-volatile memory and neuromorphic computing applications. In this study, we employed nanoparticulated cobaltite oxide (Co3O4) as a model material to demonstrate the multilevel RS and synaptic learning capabilities because of its multiple and stable redox state properties. The Pt/Co3O4/Pt memristive device exhibited tunable RS properties with respect to different voltages and compliance currents (CC) without the electroforming process. That is, the device showed voltage-dependent RS at a higher CC whereas CC-dependent RS was observed at lower CC. The device showed four different resistance states during endurance and retention measurements and non-volatile memory results indicated that the CC-based measurement had less variation. Besides, we investigated the basic and complex synaptic plasticity properties using the analog current-voltage characteristics of the Pt/Co3O4/Pt device. In particular, we mimicked the potentiation–depression and four-spike time-dependent plasticity (STDP) rules such as asymmetric Hebbian, asymmetric anti-Hebbian, symmetric Hebbian, and symmetric anti-Hebbian learning rules. The results of the present work indicate that the cobaltite oxide is an excellent nanomaterial for both multilevel RS and neuromorphic computing applications. © 2020 | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | Chinese Society of Metals | - |
dc.title | Multilevel resistive switching and synaptic plasticity of nanoparticulated cobaltite oxide memristive device | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, T.G. | - |
dc.identifier.doi | 10.1016/j.jmst.2020.10.046 | - |
dc.identifier.scopusid | 2-s2.0-85097055557 | - |
dc.identifier.wosid | 000652023600008 | - |
dc.identifier.bibliographicCitation | Journal of Materials Science and Technology, v.78, pp.81 - 91 | - |
dc.relation.isPartOf | Journal of Materials Science and Technology | - |
dc.citation.title | Journal of Materials Science and Technology | - |
dc.citation.volume | 78 | - |
dc.citation.startPage | 81 | - |
dc.citation.endPage | 91 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Metallurgy & Metallurgical Engineering | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Metallurgy & Metallurgical Engineering | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | MEMORY | - |
dc.subject.keywordPlus | CO3O4 | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | RRAM | - |
dc.subject.keywordPlus | IMPLEMENTATION | - |
dc.subject.keywordPlus | BIPOLAR | - |
dc.subject.keywordPlus | LAYER | - |
dc.subject.keywordPlus | LOGIC | - |
dc.subject.keywordPlus | STDP | - |
dc.subject.keywordAuthor | Cobaltite oxide | - |
dc.subject.keywordAuthor | Memristive device | - |
dc.subject.keywordAuthor | Multilevel resistive switching | - |
dc.subject.keywordAuthor | STDP | - |
dc.subject.keywordAuthor | Synaptic plasticity | - |
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