Estimations of Activation Energy for Dislocation Mobility in p-GaN

Abstract

Temperature dependence of dislocation rosettes size growth in p-GaN has been investigated. It is shown that the star-of-David-like rosettes form in p-GaN even at room temperature while in n-GaN such rosettes are formed only at temperatures exceeding 573 K. The activation energy for the dislocation glide was estimated as 450 100 meV, which is lower than 720 160 meV in n-GaN. Cathodoluminescence study reveals a decrease of 3.28 and 3.2 eV peak intensities in dislocated region.