Low power Ti-doped NbO2-based selector device with high selectivity and low OFF current
DC Field | Value | Language |
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dc.contributor.author | Jeon, Dong Su | - |
dc.contributor.author | Dongale, Tukaram D. | - |
dc.contributor.author | Kim, Tae Geun | - |
dc.date.accessioned | 2022-02-12T09:40:19Z | - |
dc.date.available | 2022-02-12T09:40:19Z | - |
dc.date.created | 2022-02-09 | - |
dc.date.issued | 2021-12-05 | - |
dc.identifier.issn | 0925-8388 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/135474 | - |
dc.description.abstract | The crossbar array-based resistive memory is considered a potential architecture for high-density nonvolatile memory applications. However, the sneak current path problem associated with the crossbar array structure limits its use in practical applications. This limitation can be removed by employing a selector device in the crossbar array structure. Therefore, we propose NbO2 as a selector device as it operates at a rapid speed during the insulator-metal transition (IMT). Herein, we fabricated a Ti-doped NbO2 selector device and demonstrated a very low OFF current (5 x 10-11 A). The effect of Ti doping in the NbO2 device was studied by varying the Ti concentration during a radio frequency co-sputtering process. We intentionally prevented the formation of Nb2O5, and a high-quality NbO2 layer was deposited with an appropriate Ti concentration. Furthermore, we modulated the IMT characteristics of the NbO2 device by varying the Ti concentration. The fabricated Ti-doped NbO2 selector device showed an ION/IOFF ratio greater than 5 x 104. Additionally, a drift-free fast switching operation (< 20 ns) was achieved for the optimized selector device. These results suggest the high suitability of IMT-based NbO2 devices in selector applications. (c) 2021 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.subject | NBO2 | - |
dc.subject | TRANSITIONS | - |
dc.title | Low power Ti-doped NbO2-based selector device with high selectivity and low OFF current | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Geun | - |
dc.identifier.doi | 10.1016/j.jallcom.2021.161041 | - |
dc.identifier.scopusid | 2-s2.0-85109449373 | - |
dc.identifier.wosid | 000686600400005 | - |
dc.identifier.bibliographicCitation | JOURNAL OF ALLOYS AND COMPOUNDS, v.884 | - |
dc.relation.isPartOf | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.citation.title | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.citation.volume | 884 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Metallurgy & Metallurgical Engineering | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Metallurgy & Metallurgical Engineering | - |
dc.subject.keywordPlus | NBO2 | - |
dc.subject.keywordPlus | TRANSITIONS | - |
dc.subject.keywordAuthor | Co-sputtering | - |
dc.subject.keywordAuthor | Crossbar array | - |
dc.subject.keywordAuthor | Insulator-metal transition | - |
dc.subject.keywordAuthor | NbO2 | - |
dc.subject.keywordAuthor | Resistive switching | - |
dc.subject.keywordAuthor | Ti doping | - |
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