Detailed Information

Cited 0 time in webofscience Cited 0 time in scopus
Metadata Downloads

A Comparison of CF4, CHF3 and C4F8 + Ar/O-2 Inductively Coupled Plasmas for Dry Etching Applications

Authors
Lim, NominEfremov, AlexanderKwon, Kwang-Ho
Issue Date
11월-2021
Publisher
SPRINGER
Keywords
Fluorocarbon gases; Plasma; Parameters; Active species; Ionization; Dissociation; Etching; Polymerization
Citation
PLASMA CHEMISTRY AND PLASMA PROCESSING, v.41, no.6, pp.1671 - 1689
Indexed
SCIE
SCOPUS
Journal Title
PLASMA CHEMISTRY AND PLASMA PROCESSING
Volume
41
Number
6
Start Page
1671
End Page
1689
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/135824
DOI
10.1007/s11090-021-10198-z
ISSN
0272-4324
Abstract
In this work, we performed the comparative study of plasma parameters, steady-state gas phase compositions and Si reactive-ion etching kinetics in CF4 + O-2 + Ar, CHF3 + O-2 + Ar and C4F8 + O-2 + Ar gas mixtures with variable O-2/Ar component ratios. It was found that the substitution of Ar for O-2 (a) did not disturb the well-known correlation between the polymerizing ability and the F/C ratio in the original fluorocarbon molecule; (b) causes similar changes in electrons- and ions-related plasma parameters (electron temperature, plasma density, ion bombardment energy); and (c) always suppresses densities of polymerizing radicals and reduces the polymer film thickness. At the same time, the specific effects of oxygen on F atom kinetics result in sufficient differences in their densities and fluxes. It was shown that the dominant etching mechanism for Si in all three gas systems is the chemical etching pathway provided by F atoms (since the contribution of physical sputtering is below 10%) while measured etching rates do not follow the behavior of F atom flux. The phenomenological analysis of heterogeneous process kinetics allowed one to suggest factors influencing the effective reaction probability. These are either the transport of F atoms through thick polymer film (in the case of high-polymerizing C4F8 + O-2 + Ar plasma) or heterogeneous reactions with a participation of oxygen atoms under the condition of thin or non-continuous polymer film (in the case of low-polymerizing CF4 + O-2 + Ar plasma).
Files in This Item
There are no files associated with this item.
Appears in
Collections
Graduate School > Department of Control and Instrumentation Engineering > 1. Journal Articles

qrcode

Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher Kwon, Kwang Ho photo

Kwon, Kwang Ho
제어계측공학과
Read more

Altmetrics

Total Views & Downloads

BROWSE