Simulation studies on electrical characteristics of silicon nanowire feedback field-effect transistors with interface trap charges
DC Field | Value | Language |
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dc.contributor.author | Yang, Yejin | - |
dc.contributor.author | Park, Young-Soo | - |
dc.contributor.author | Son, Jaemin | - |
dc.contributor.author | Cho, Kyoungah | - |
dc.contributor.author | Kim, Sangsig | - |
dc.date.accessioned | 2022-02-21T03:42:11Z | - |
dc.date.available | 2022-02-21T03:42:11Z | - |
dc.date.created | 2022-02-08 | - |
dc.date.issued | 2021-09-20 | - |
dc.identifier.issn | 2045-2322 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/136330 | - |
dc.description.abstract | In this study, we examine the electrical characteristics of silicon nanowire feedback field-effect transistors (FBFETs) with interface trap charges between the channel and gate oxide. The band diagram, I-V characteristics, memory window, and operation were analyzed using a commercial technology computer-aided design simulation. In an n-channel FBFET, the memory window narrows (widens) from 5.47 to 3.59 V (9.24 V), as the density of the positive (negative) trap charges increases. In contrast, in the p-channel FBFET, the memory window widens (narrows) from 5.38 to 7.38 V (4.18 V), as the density of the positive (negative) trap charges increases. Moreover, we investigate the difference in the output drain current based on the interface trap charges during the memory operation. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | NATURE PORTFOLIO | - |
dc.subject | IMPACT | - |
dc.subject | FET | - |
dc.title | Simulation studies on electrical characteristics of silicon nanowire feedback field-effect transistors with interface trap charges | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Sangsig | - |
dc.identifier.doi | 10.1038/s41598-021-98182-7 | - |
dc.identifier.scopusid | 2-s2.0-85115385117 | - |
dc.identifier.wosid | 000700289800057 | - |
dc.identifier.bibliographicCitation | SCIENTIFIC REPORTS, v.11, no.1 | - |
dc.relation.isPartOf | SCIENTIFIC REPORTS | - |
dc.citation.title | SCIENTIFIC REPORTS | - |
dc.citation.volume | 11 | - |
dc.citation.number | 1 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalWebOfScienceCategory | Multidisciplinary Sciences | - |
dc.subject.keywordPlus | FET | - |
dc.subject.keywordPlus | IMPACT | - |
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