One-transistor static random-access memory cell array comprising single-gated feedback field-effect transistors
DC Field | Value | Language |
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dc.contributor.author | Choi, Sangik | - |
dc.contributor.author | Son, Jaemin | - |
dc.contributor.author | Cho, Kyoungah | - |
dc.contributor.author | Kim, Sangsig | - |
dc.date.accessioned | 2022-02-21T10:42:14Z | - |
dc.date.available | 2022-02-21T10:42:14Z | - |
dc.date.created | 2022-02-08 | - |
dc.date.issued | 2021-09-09 | - |
dc.identifier.issn | 2045-2322 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/136371 | - |
dc.description.abstract | In this study, we fabricated a 2 x 2 one-transistor static random-access memory (1T-SRAM) cell array comprising single-gated feedback field-effect transistors and examined their operation and memory characteristics. The individual 1T-SRAM cell had a retention time of over 900 s, nondestructive reading characteristics of 10,000 s, and an endurance of 10(8) cycles. The standby power of the individual 1T-SRAM cell was estimated to be 0.7 pW for holding the "0" state and 6 nW for holding the "1" state. For a selected cell in the 2 x 2 1T-SRAM cell array, nondestructive reading of the memory was conducted without any disturbance in the half-selected cells. This immunity to disturbances validated the reliability of the 1T-SRAM cell array. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | NATURE PORTFOLIO | - |
dc.subject | LOW-POWER | - |
dc.subject | SRAM CELL | - |
dc.subject | LOW-VOLTAGE | - |
dc.title | One-transistor static random-access memory cell array comprising single-gated feedback field-effect transistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Sangsig | - |
dc.identifier.doi | 10.1038/s41598-021-97479-x | - |
dc.identifier.scopusid | 2-s2.0-85114697615 | - |
dc.identifier.wosid | 000695272000034 | - |
dc.identifier.bibliographicCitation | SCIENTIFIC REPORTS, v.11, no.1 | - |
dc.relation.isPartOf | SCIENTIFIC REPORTS | - |
dc.citation.title | SCIENTIFIC REPORTS | - |
dc.citation.volume | 11 | - |
dc.citation.number | 1 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalWebOfScienceCategory | Multidisciplinary Sciences | - |
dc.subject.keywordPlus | LOW-POWER | - |
dc.subject.keywordPlus | LOW-VOLTAGE | - |
dc.subject.keywordPlus | SRAM CELL | - |
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