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WR-3.4 InP HBT Amplifier Module With Integrated Wideband Waveguide Transitions

Authors
Yi, C.Lee, K. M.Kim, H. J.Kim, M.
Issue Date
12월-2021
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords
Integrated waveguide transition; WR-3.4 waveguide; terahertz amplifier; terahertz waveguide module
Citation
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.31, no.12, pp.1315 - 1318
Indexed
SCIE
SCOPUS
Journal Title
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
Volume
31
Number
12
Start Page
1315
End Page
1318
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/136670
DOI
10.1109/LMWC.2021.3109905
ISSN
1531-1309
Abstract
A broadband terahertz amplifier waveguide module is presented. The IC chip with a width of 390 mu m fits in the E-plane of a standard WR-3.4 waveguide with 20 mu m air-gaps on either side. The input and output waveguide transitions integrated on the chip possess various design factors that include locations of the dipoles, back-short pedestal, and substrate vias carefully selected for near full-band characteristics. The measurements on a module containing a passive thru-line IC chip show only 2.7 dB of average loss across 220-300 GHz range. With an amplifier IC chip mounted inside, the module shows a peak gain of 17 dB at 288 GHz with a 3 dB bandwidth from 259 to 294 GHz.
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공과대학 (전기전자공학부)
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