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Etching Characteristics of Low-k Dielectric Using C(5)H2F(10) Liquefied Gas Plasma for Mitigating of Global Warming Potential

Authors
Choi, YeonsikLee, JongchanOh, YounghunLee, Hyun WooKwon, Kwang-Ho
Issue Date
9월-2021
Publisher
AMER SCIENTIFIC PUBLISHERS
Keywords
Silicon Oxycarbide (SiOC); Global Warming Potential; L-PFC Gas; Dielectric Constant; Plasma Etching Damage; Surface Characteristics
Citation
SCIENCE OF ADVANCED MATERIALS, v.13, no.9, pp.1764 - 1770
Indexed
SCIE
Journal Title
SCIENCE OF ADVANCED MATERIALS
Volume
13
Number
9
Start Page
1764
End Page
1770
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/136691
DOI
10.1166/sam.2021.4021
ISSN
1947-2935
Abstract
In this work, we studied the etch characteristics and dielectric constant change of SiOC thin films by plasma etching for the fabrication of nanoscale devices to evaluate the C5H2F10 as alternative etching gas. We performed plasma etching of SiOC films with inductively coupled plasma using the CF4 +X+O2 mixed gas, where X = CHF3 and C5H2F10. Plasma diagnosis such as optical emission spectroscopy and double Langmuir probe measurements were carried. We analyzed the chemical compositions of residues on the etched SiOC film surface using X-ray photoelectron spectroscopy. After the process, contact resistance was measured using the transmission line method to analyze the degree of polymer on the surface of the silicon. Ellipsometry were used to evaluate the change in the dielectric constant of the thin film due to plasma exposure. It was confirmed that the etched profile was more vertical than that of the CHF3 gas plasma, and the increase in the dielectric constant of the SiOC thin film by C5H2F10 gas plasma is less than that of CHF3 gas plasma. These results confir med that C5H2F10 gas was a powerful alternative to CHF3 gas in semiconductor processing for the fabrication IP: 49.249.253.194 On: Fri, 31 Dec 2021 06:27:29 of nanoscale devices. Copyright: American Scientific Publishers
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