W- and G-Band GaN Voltage-Controlled Oscillators With High Output Power and High Efficiency
DC Field | Value | Language |
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dc.contributor.author | Kim, Dongkyo | - |
dc.contributor.author | Jeon, Sanggeun | - |
dc.date.accessioned | 2022-02-26T15:40:31Z | - |
dc.date.available | 2022-02-26T15:40:31Z | - |
dc.date.created | 2022-02-07 | - |
dc.date.issued | 2021-08 | - |
dc.identifier.issn | 0018-9480 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/137028 | - |
dc.description.abstract | This article presents W- and G-band voltage-controlled oscillators (VCOs) fabricated in a 60 nm GaN high electron-mobility transistor (HEMT) process with f(T)/f(MAX) of 190/250 GHz. Two W-band fundamental VCOs (VCO1 and VCO2) are designed without and with a varactor, respectively. In addition, a G-band push-push VCO (VCO3) is designed to demonstrate feasibility of a GaN power source in the sub-terahertz band. The measurement shows that VCO1 and VCO2 exhibit output power of 22.5 and 22.6 dBm and dc-to-RF efficiency of 14.7% and 16.8% at 87.5 and 86.5 GHz, respectively. The power and efficiency are the highest values among the previously reported GaN VCOs operating beyond 50 GHz. Furthermore, VCO2 achieves a wide tuning range of 9.0 GHz (77.5-86.5 GHz). The VCO3 exhibits high output power of 9.3 dBm at 180.6 GHz. To the best of the authors' knowledge, this is the first demonstration of a G-band VCO in a GaN technology. The W- and G-band VCOs occupy compact chip areas of 0.48 and 0.32 mm(2), respectively. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | TRANSCEIVER CHIPSET | - |
dc.subject | TUNING RANGE | - |
dc.subject | SIGE | - |
dc.subject | VCO | - |
dc.subject | RADAR | - |
dc.subject | DESIGN | - |
dc.subject | PLL | - |
dc.title | W- and G-Band GaN Voltage-Controlled Oscillators With High Output Power and High Efficiency | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeon, Sanggeun | - |
dc.identifier.doi | 10.1109/TMTT.2021.3092362 | - |
dc.identifier.scopusid | 2-s2.0-85112439355 | - |
dc.identifier.wosid | 000682168300032 | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.69, no.8, pp.3908 - 3916 | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | - |
dc.citation.title | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | - |
dc.citation.volume | 69 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 3908 | - |
dc.citation.endPage | 3916 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | DESIGN | - |
dc.subject.keywordPlus | PLL | - |
dc.subject.keywordPlus | RADAR | - |
dc.subject.keywordPlus | SIGE | - |
dc.subject.keywordPlus | TRANSCEIVER CHIPSET | - |
dc.subject.keywordPlus | TUNING RANGE | - |
dc.subject.keywordPlus | VCO | - |
dc.subject.keywordAuthor | G-band | - |
dc.subject.keywordAuthor | W-band | - |
dc.subject.keywordAuthor | gallium nitride (GaN) | - |
dc.subject.keywordAuthor | high efficiency | - |
dc.subject.keywordAuthor | high power | - |
dc.subject.keywordAuthor | microwave monolithic integrated circuits | - |
dc.subject.keywordAuthor | voltage-controlled oscillator (VCO) | - |
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