Defect-Engineered n-Doping of WSe2 via Argon Plasma Treatment and Its Application in Field-Effect Transistors
DC Field | Value | Language |
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dc.contributor.author | Kim, Junghun | - |
dc.contributor.author | Park, Hyunik | - |
dc.contributor.author | Yoo, SangHyuk | - |
dc.contributor.author | Im, Yeon-Ho | - |
dc.contributor.author | Kang, Keonwook | - |
dc.contributor.author | Kim, Jihyun | - |
dc.date.accessioned | 2022-02-28T08:41:55Z | - |
dc.date.available | 2022-02-28T08:41:55Z | - |
dc.date.created | 2022-02-09 | - |
dc.date.issued | 2021-07 | - |
dc.identifier.issn | 2196-7350 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/137233 | - |
dc.description.abstract | Doping of van der Waals layered semiconductor materials is an essential technique to realize their full potential for implementation in nanoelectronics. Herein, defect-engineered and area-selective n-doping of ambipolar multi-layer WSe2 are demonstrated via Ar plasma treatment. The contact regions of the WSe2 are exposed to a mild Ar plasma treatment to induce Se vacancy, while the channel region is protected by a hexagonal boron nitride. The results are systematically analyzed using structural and optical characterization methods, and the origin of the n-type properties in the plasma-treated WSe2 is proposed using plane-wave density functional theory calculations. The formation of a defect-induced donor level in the source and drain regions of the multilayer WSe2 helps to improve the contact behaviors in field-effect transistors (FETs), enhancing the transport of the free electrons. The n-channel current on/off ratio (from 12.8 to 8.3 x 10(6)) and contact resistance (as low as 2.68 k Omega.mm) of the n-type WSe2 FETs are greatly improved by the area-specific Ar plasma treatment, enabling the fabrication of a WSe2-based complementary metal-oxide-semiconductor inverter. This method provides a viable route to control the carrier type and concentration in ambipolar van der Waals layered semiconductors, paving the way for high-performance nanoelectronic devices. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | WILEY | - |
dc.subject | TOTAL-ENERGY CALCULATIONS | - |
dc.subject | ELECTRICAL CONTACTS | - |
dc.subject | METAL CONTACTS | - |
dc.subject | PERFORMANCE | - |
dc.subject | TRANSITION | - |
dc.subject | OXYGEN | - |
dc.subject | MOSE2 | - |
dc.title | Defect-Engineered n-Doping of WSe2 via Argon Plasma Treatment and Its Application in Field-Effect Transistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
dc.identifier.doi | 10.1002/admi.202100718 | - |
dc.identifier.scopusid | 2-s2.0-85111947380 | - |
dc.identifier.wosid | 000667136000001 | - |
dc.identifier.bibliographicCitation | ADVANCED MATERIALS INTERFACES, v.8, no.14 | - |
dc.relation.isPartOf | ADVANCED MATERIALS INTERFACES | - |
dc.citation.title | ADVANCED MATERIALS INTERFACES | - |
dc.citation.volume | 8 | - |
dc.citation.number | 14 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | ELECTRICAL CONTACTS | - |
dc.subject.keywordPlus | METAL CONTACTS | - |
dc.subject.keywordPlus | MOSE2 | - |
dc.subject.keywordPlus | OXYGEN | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | TOTAL-ENERGY CALCULATIONS | - |
dc.subject.keywordPlus | TRANSITION | - |
dc.subject.keywordAuthor | 2D materials | - |
dc.subject.keywordAuthor | ambipolar semiconductors | - |
dc.subject.keywordAuthor | defect engineering | - |
dc.subject.keywordAuthor | field-effect transistors | - |
dc.subject.keywordAuthor | plasma treatment | - |
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