Defect-Engineered n-Doping of WSe2 via Argon Plasma Treatment and Its Application in Field-Effect Transistors
- Authors
- Kim, Junghun; Park, Hyunik; Yoo, SangHyuk; Im, Yeon-Ho; Kang, Keonwook; Kim, Jihyun
- Issue Date
- 7월-2021
- Publisher
- WILEY
- Keywords
- 2D materials; ambipolar semiconductors; defect engineering; field-effect transistors; plasma treatment
- Citation
- ADVANCED MATERIALS INTERFACES, v.8, no.14
- Indexed
- SCIE
SCOPUS
- Journal Title
- ADVANCED MATERIALS INTERFACES
- Volume
- 8
- Number
- 14
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/137233
- DOI
- 10.1002/admi.202100718
- ISSN
- 2196-7350
- Abstract
- Doping of van der Waals layered semiconductor materials is an essential technique to realize their full potential for implementation in nanoelectronics. Herein, defect-engineered and area-selective n-doping of ambipolar multi-layer WSe2 are demonstrated via Ar plasma treatment. The contact regions of the WSe2 are exposed to a mild Ar plasma treatment to induce Se vacancy, while the channel region is protected by a hexagonal boron nitride. The results are systematically analyzed using structural and optical characterization methods, and the origin of the n-type properties in the plasma-treated WSe2 is proposed using plane-wave density functional theory calculations. The formation of a defect-induced donor level in the source and drain regions of the multilayer WSe2 helps to improve the contact behaviors in field-effect transistors (FETs), enhancing the transport of the free electrons. The n-channel current on/off ratio (from 12.8 to 8.3 x 10(6)) and contact resistance (as low as 2.68 k Omega.mm) of the n-type WSe2 FETs are greatly improved by the area-specific Ar plasma treatment, enabling the fabrication of a WSe2-based complementary metal-oxide-semiconductor inverter. This method provides a viable route to control the carrier type and concentration in ambipolar van der Waals layered semiconductors, paving the way for high-performance nanoelectronic devices.
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