Effects of Downstream Plasma Exposure on beta-Ga2O3 Rectifiers
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Xia, Xinyi | - |
dc.contributor.author | Xian, Minghan | - |
dc.contributor.author | Fares, Chaker | - |
dc.contributor.author | Ren, Fan | - |
dc.contributor.author | Kim, Junghun | - |
dc.contributor.author | Kim, Jihyun | - |
dc.contributor.author | Tadjer, Marko | - |
dc.contributor.author | Pearton, Stephen J. | - |
dc.date.accessioned | 2022-03-01T00:41:59Z | - |
dc.date.available | 2022-03-01T00:41:59Z | - |
dc.date.created | 2022-02-09 | - |
dc.date.issued | 2021-06-01 | - |
dc.identifier.issn | 2162-8769 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/137314 | - |
dc.description.abstract | The effects of downstream plasma exposure with O-2, N-2 or CF4 discharges on Si-doped Ga2O3 Schottky diode forward and reverse current-voltage characteristics were investigated. The samples were exposed to discharges with rf power of 50 W plasma at a pressure of 400 mTorr and a fixed treatment time of 1 min to simulate dielectric layer removal, photoresist ashing or surface cleaning steps. Schottky contacts were deposited through a shadow mask after exposure to avoid any changes to the surface. A Schottky barrier height of 1.1 eV was obtained for the reference sample without plasma treatment, with an ideality factor of 1.0. The diodes exposed to CF4 showed a 0.25 V shift from the I-V of the reference sample due to a Schottky barrier height lowering around 14%. The diodes showed a decrease of Schottky barrier height of 2.5 and 6.5% with O-2 or N-2 treatments, respectively. The effect of plasma exposure on the ideality factor of diodes treated with these plasmas was minimal; 0.2% for O-2 and N-2, 0.3% for CF4, respectively. The reverse leakage currents were 1.2, 2.2 and 4.8 mu A cm(-2) for the diodes treated with O-2, and CF4, and N-2 respectively. The effect of downstream plasma treatment on diode on-resistance and on-off ratio were also minimal. The changes observed are much less than caused by exposure to hydrogen-containing plasmas and indicate that downstream plasma stripping of films from Ga2O3 during device processing is a relatively benign approach. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.subject | BARRIER DIODES | - |
dc.subject | SCHOTTKY | - |
dc.subject | VOLTAGE | - |
dc.title | Effects of Downstream Plasma Exposure on beta-Ga2O3 Rectifiers | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
dc.identifier.doi | 10.1149/2162-8777/ac0500 | - |
dc.identifier.scopusid | 2-s2.0-85107939434 | - |
dc.identifier.wosid | 000660310100001 | - |
dc.identifier.bibliographicCitation | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, v.10, no.6 | - |
dc.relation.isPartOf | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | - |
dc.citation.title | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | - |
dc.citation.volume | 10 | - |
dc.citation.number | 6 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | BARRIER DIODES | - |
dc.subject.keywordPlus | SCHOTTKY | - |
dc.subject.keywordPlus | VOLTAGE | - |
dc.subject.keywordAuthor | Microelectrnics | - |
dc.subject.keywordAuthor | Semiconductor Materials | - |
dc.subject.keywordAuthor | Wide energy bandgap | - |
dc.subject.keywordAuthor | gallium oxide | - |
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