Effects of Downstream Plasma Exposure on beta-Ga2O3 Rectifiers
- Authors
- Xia, Xinyi; Xian, Minghan; Fares, Chaker; Ren, Fan; Kim, Junghun; Kim, Jihyun; Tadjer, Marko; Pearton, Stephen J.
- Issue Date
- 1-6월-2021
- Publisher
- ELECTROCHEMICAL SOC INC
- Keywords
- Microelectrnics; Semiconductor Materials; Wide energy bandgap; gallium oxide
- Citation
- ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, v.10, no.6
- Indexed
- SCIE
SCOPUS
- Journal Title
- ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
- Volume
- 10
- Number
- 6
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/137314
- DOI
- 10.1149/2162-8777/ac0500
- ISSN
- 2162-8769
- Abstract
- The effects of downstream plasma exposure with O-2, N-2 or CF4 discharges on Si-doped Ga2O3 Schottky diode forward and reverse current-voltage characteristics were investigated. The samples were exposed to discharges with rf power of 50 W plasma at a pressure of 400 mTorr and a fixed treatment time of 1 min to simulate dielectric layer removal, photoresist ashing or surface cleaning steps. Schottky contacts were deposited through a shadow mask after exposure to avoid any changes to the surface. A Schottky barrier height of 1.1 eV was obtained for the reference sample without plasma treatment, with an ideality factor of 1.0. The diodes exposed to CF4 showed a 0.25 V shift from the I-V of the reference sample due to a Schottky barrier height lowering around 14%. The diodes showed a decrease of Schottky barrier height of 2.5 and 6.5% with O-2 or N-2 treatments, respectively. The effect of plasma exposure on the ideality factor of diodes treated with these plasmas was minimal; 0.2% for O-2 and N-2, 0.3% for CF4, respectively. The reverse leakage currents were 1.2, 2.2 and 4.8 mu A cm(-2) for the diodes treated with O-2, and CF4, and N-2 respectively. The effect of downstream plasma treatment on diode on-resistance and on-off ratio were also minimal. The changes observed are much less than caused by exposure to hydrogen-containing plasmas and indicate that downstream plasma stripping of films from Ga2O3 during device processing is a relatively benign approach.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > Department of Chemical and Biological Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.