Carrier-type modulation of tungsten diselenide (WSe2) field-effect transistors (FETs) via benzyl viologen (BV) doping
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Soojin | - |
dc.contributor.author | Kim, Chulmin | - |
dc.contributor.author | Hwang, Young Hyun | - |
dc.contributor.author | Lee, Seungwon | - |
dc.contributor.author | Choi, Minjung | - |
dc.contributor.author | Ju, Byeong-Kwon | - |
dc.date.accessioned | 2022-03-01T19:41:38Z | - |
dc.date.available | 2022-03-01T19:41:38Z | - |
dc.date.created | 2022-02-09 | - |
dc.date.issued | 2021-05 | - |
dc.identifier.issn | 0009-2614 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/137407 | - |
dc.description.abstract | With the advancement of technology based on low-dimensional materials, numerous attempts have been made to tune the semiconducting behavior of field-effect transistors to broaden their potential applications in various fields of electronics. Herein, a stable and site-selective method for the surface doping of tungsten diselenide devices is presented. Experimental results suggested that benzyl viologen doping induced a carrier-type transition effect on the device, and the electrical properties were successfully recovered after immersion in toluene solution. The recovered device was exposed to low-vacuum conditions for 10 d; no additional defects were observed on the interface. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER | - |
dc.title | Carrier-type modulation of tungsten diselenide (WSe2) field-effect transistors (FETs) via benzyl viologen (BV) doping | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Ju, Byeong-Kwon | - |
dc.identifier.doi | 10.1016/j.cplett.2021.138453 | - |
dc.identifier.scopusid | 2-s2.0-85102602033 | - |
dc.identifier.wosid | 000645125200008 | - |
dc.identifier.bibliographicCitation | CHEMICAL PHYSICS LETTERS, v.770 | - |
dc.relation.isPartOf | CHEMICAL PHYSICS LETTERS | - |
dc.citation.title | CHEMICAL PHYSICS LETTERS | - |
dc.citation.volume | 770 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Physics, Atomic, Molecular & Chemical | - |
dc.subject.keywordAuthor | Carrier type transition | - |
dc.subject.keywordAuthor | Electrical properties | - |
dc.subject.keywordAuthor | Electron doping | - |
dc.subject.keywordAuthor | Field-effect transistors | - |
dc.subject.keywordAuthor | WSe2 | - |
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