Carrier-type modulation of tungsten diselenide (WSe2) field-effect transistors (FETs) via benzyl viologen (BV) doping
- Authors
- Kim, Soojin; Kim, Chulmin; Hwang, Young Hyun; Lee, Seungwon; Choi, Minjung; Ju, Byeong-Kwon
- Issue Date
- 5월-2021
- Publisher
- ELSEVIER
- Keywords
- Carrier type transition; Electrical properties; Electron doping; Field-effect transistors; WSe2
- Citation
- CHEMICAL PHYSICS LETTERS, v.770
- Indexed
- SCIE
SCOPUS
- Journal Title
- CHEMICAL PHYSICS LETTERS
- Volume
- 770
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/137407
- DOI
- 10.1016/j.cplett.2021.138453
- ISSN
- 0009-2614
- Abstract
- With the advancement of technology based on low-dimensional materials, numerous attempts have been made to tune the semiconducting behavior of field-effect transistors to broaden their potential applications in various fields of electronics. Herein, a stable and site-selective method for the surface doping of tungsten diselenide devices is presented. Experimental results suggested that benzyl viologen doping induced a carrier-type transition effect on the device, and the electrical properties were successfully recovered after immersion in toluene solution. The recovered device was exposed to low-vacuum conditions for 10 d; no additional defects were observed on the interface.
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Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
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