One-Step Etching Characteristics of ITO/Ag/ITO Multilayered Electrode in High-Density and High-Electron-Temperature Plasma
DC Field | Value | Language |
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dc.contributor.author | Yoon, Ho-Won | - |
dc.contributor.author | Shin, Seung-Min | - |
dc.contributor.author | Kwon, Seong-Yong | - |
dc.contributor.author | Cho, Hyun-Min | - |
dc.contributor.author | Kim, Sang-Gab | - |
dc.contributor.author | Hong, Mun-Pyo | - |
dc.date.accessioned | 2022-03-04T00:40:55Z | - |
dc.date.available | 2022-03-04T00:40:55Z | - |
dc.date.created | 2022-02-09 | - |
dc.date.issued | 2021-04 | - |
dc.identifier.issn | 1996-1944 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/137682 | - |
dc.description.abstract | This paper presents the dry etching characteristics of indium tin oxide (ITO)/Ag/ITO multilayered thin film, used as a pixel electrode in a high-resolution active-matrix organic light-emitting diode (AMOLED) device. Dry etching was performed using a combination of H-2 and HCl gases in a reactive ion etching system with a remote electron cyclotron resonance (ECR) plasma source, in order to achieve high electron temperature. The effect of the gas ratio (H-2/HCl) was closely observed, in order to achieve an optimal etch profile and an effective etch process, while other parameters-such as the radio frequency (RF) power, ECR power, chamber pressure, and temperature-were fixed. The optimized process, with an appropriate gas ratio, constitutes a one-step serial dry etch solution for ITO and Ag multilayered thin films. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | MDPI | - |
dc.subject | INDIUM-TIN OXIDE | - |
dc.subject | SILVER | - |
dc.subject | ANODE | - |
dc.subject | AG | - |
dc.subject | FILMS | - |
dc.subject | NI | - |
dc.subject | CU | - |
dc.title | One-Step Etching Characteristics of ITO/Ag/ITO Multilayered Electrode in High-Density and High-Electron-Temperature Plasma | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Hong, Mun-Pyo | - |
dc.identifier.doi | 10.3390/ma14082025 | - |
dc.identifier.scopusid | 2-s2.0-85104940420 | - |
dc.identifier.wosid | 000644534100001 | - |
dc.identifier.bibliographicCitation | MATERIALS, v.14, no.8 | - |
dc.relation.isPartOf | MATERIALS | - |
dc.citation.title | MATERIALS | - |
dc.citation.volume | 14 | - |
dc.citation.number | 8 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Metallurgy & Metallurgical Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Metallurgy & Metallurgical Engineering | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | AG | - |
dc.subject.keywordPlus | ANODE | - |
dc.subject.keywordPlus | CU | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | INDIUM-TIN OXIDE | - |
dc.subject.keywordPlus | NI | - |
dc.subject.keywordPlus | SILVER | - |
dc.subject.keywordAuthor | Ag | - |
dc.subject.keywordAuthor | ECR-RIE | - |
dc.subject.keywordAuthor | H-2 | - |
dc.subject.keywordAuthor | HCl gas | - |
dc.subject.keywordAuthor | ITO | - |
dc.subject.keywordAuthor | ITO multilayer | - |
dc.subject.keywordAuthor | TE-OLED | - |
dc.subject.keywordAuthor | one-step dry etch | - |
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