High-Efficiency and High-Reliability Deep-UV Light-Emitting Diodes Using Transparent Ni-Implanted AlN Ohmic Electrodes
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Tae Hoon | - |
dc.contributor.author | Son, Kyung Rock | - |
dc.contributor.author | Hirayama, Hideki | - |
dc.contributor.author | Kim, Tae Geun | - |
dc.date.accessioned | 2022-03-10T15:41:02Z | - |
dc.date.available | 2022-03-10T15:41:02Z | - |
dc.date.created | 2022-02-09 | - |
dc.date.issued | 2021 | - |
dc.identifier.issn | 2169-3536 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/138483 | - |
dc.description.abstract | Significant efforts have been devoted to improve the external quantum efficiency (EQE) of AlGaN-based top-emitting deep-UV light-emitting diodes (DUV LEDs). However, issues such as ohmic contact and challenges related to p-AlGaN doping and growth have hampered advancement. In this paper, a record-high EQE of 3.2% is reported for AlGaN-based lateral-type top-emitting DUV LEDs in which Ni-doped AlN (Ni:AlN) DUV-transparent ohmic electrodes are used. The ohmic electrode exhibits a transmittance of more than 90% at 280 nm and a reasonably good ohmic behavior with the p-Al0.64Ga0.36N contact layers. The Ni:AlN-based DUV LED demonstrates outstanding performance (i.e., operating voltage of 8.3 V at 20 mA, light output power of 11.6 mW at 100 mA) relative to the conventional thin ITO- and Ni/Au-based DUV LEDs. Furthermore, the proposed device is highly reliable, as evidenced by the fact that it maintained more than 80% of its light output power after 500 h of operation, and the operating voltage increased by only 2.7% over the operating time of 1 x 10(5)s. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | LEDS | - |
dc.subject | POWER | - |
dc.title | High-Efficiency and High-Reliability Deep-UV Light-Emitting Diodes Using Transparent Ni-Implanted AlN Ohmic Electrodes | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Geun | - |
dc.identifier.doi | 10.1109/ACCESS.2021.3136351 | - |
dc.identifier.scopusid | 2-s2.0-85121823600 | - |
dc.identifier.wosid | 000733938000001 | - |
dc.identifier.bibliographicCitation | IEEE ACCESS, v.9, pp.166617 - 166623 | - |
dc.relation.isPartOf | IEEE ACCESS | - |
dc.citation.title | IEEE ACCESS | - |
dc.citation.volume | 9 | - |
dc.citation.startPage | 166617 | - |
dc.citation.endPage | 166623 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Computer Science | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Telecommunications | - |
dc.relation.journalWebOfScienceCategory | Computer Science, Information Systems | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Telecommunications | - |
dc.subject.keywordPlus | LEDS | - |
dc.subject.keywordPlus | POWER | - |
dc.subject.keywordAuthor | Deep ultraviolet | - |
dc.subject.keywordAuthor | electrical doping process | - |
dc.subject.keywordAuthor | light emitting diodes | - |
dc.subject.keywordAuthor | transparent conductive electrode | - |
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