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An mm-Wave Multi-Mode Asymmetric Power Amplifier With Back-off Efficiency Enhancement

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dc.contributor.authorPark, Seungwon-
dc.contributor.authorHwang, Hyeonseok-
dc.contributor.authorJeon, Sanggeun-
dc.date.accessioned2022-03-11T19:41:03Z-
dc.date.available2022-03-11T19:41:03Z-
dc.date.created2022-01-20-
dc.date.issued2021-
dc.identifier.issn2169-3536-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/138623-
dc.description.abstractThis paper presents a multi-mode asymmetric power amplifier (MMA-PA) with back-off efficiency enhanced. The back-off efficiency is improved without a lossy impedance inverter or signal separator which is used in conventional Doherty or outphasing amplifiers. The design considerations are provided in detail. In addition, the proposed MMA-PA operates in three different modes according to the input power level. The PA is fabricated in a 65-nm bulk CMOS technology. In the high-power (HP) mode, the MMA-PA exhibits a small-signal gain of 18.4 dB at 30 GHz and a 3-dB bandwidth of 4.5 GHz from 27.7 to 32.2 GHz. The output saturation power (P-sat) and 1-dB compression power are 16.7 and 15.1 dBm, respectively. While the peak power-added efficiency (PAE) is 24.7 %, the 6-dB back-off PAE keeps a high value of 14.1 %. In the medium-power (MP) mode, P-sat and peak PAE are 12.3 dBm and 21 %, respectively with a similar gain of 18.9 dB. In the low-power (LP) mode, the gain, P-sat and peak PAE are 11.5 dB, 7.5 dBm and 16.5 %, respectively. With a 100-MHz 64-QAM OFDM signal following the 3GPP 5G NR standard, the average output power in the HP mode is 6 dBm with EVM of -26 dB and ACLR < -34 dBc. In the MP and LP modes, the average output power are 3.3 and 1.1 dBm, respectively with EVM of -26.6 and -26.1 dB.-
dc.languageEnglish-
dc.language.isoen-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.subjectCMOS-
dc.subjectCOMPENSATION-
dc.titleAn mm-Wave Multi-Mode Asymmetric Power Amplifier With Back-off Efficiency Enhancement-
dc.typeArticle-
dc.contributor.affiliatedAuthorJeon, Sanggeun-
dc.identifier.doi10.1109/ACCESS.2021.3107047-
dc.identifier.scopusid2-s2.0-85113886752-
dc.identifier.wosid000690421600001-
dc.identifier.bibliographicCitationIEEE ACCESS, v.9, pp.117282 - 117291-
dc.relation.isPartOfIEEE ACCESS-
dc.citation.titleIEEE ACCESS-
dc.citation.volume9-
dc.citation.startPage117282-
dc.citation.endPage117291-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaComputer Science-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaTelecommunications-
dc.relation.journalWebOfScienceCategoryComputer Science, Information Systems-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryTelecommunications-
dc.subject.keywordPlusCMOS-
dc.subject.keywordPlusCOMPENSATION-
dc.subject.keywordAuthorCMOS millimeter-wave-
dc.subject.keywordAuthormulti-mode-
dc.subject.keywordAuthortransformer-
dc.subject.keywordAuthorpower amplifier-
dc.subject.keywordAuthorPower amplifiers-
dc.subject.keywordAuthorPower generation-
dc.subject.keywordAuthorImpedance-
dc.subject.keywordAuthorCircuit faults-
dc.subject.keywordAuthorBandwidth-
dc.subject.keywordAuthor5G mobile communication-
dc.subject.keywordAuthorTransistors-
dc.subject.keywordAuthorAsymmetric PA-
dc.subject.keywordAuthorback-off efficiency-
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