Low-Resistivity Cobalt and Ruthenium Ultra-Thin Film Deposition Using Bipolar HiPIMS Technique
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Seo, Min | - |
dc.contributor.author | Cho, Min Kyung | - |
dc.contributor.author | Kang, Un Hyeon | - |
dc.contributor.author | Jeon, Sin Young | - |
dc.contributor.author | Lim, Sang-Ho | - |
dc.contributor.author | Han, Seung Hee | - |
dc.date.accessioned | 2022-04-01T08:40:47Z | - |
dc.date.available | 2022-04-01T08:40:47Z | - |
dc.date.created | 2022-04-01 | - |
dc.date.issued | 2022-03-01 | - |
dc.identifier.issn | 2162-8769 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/139342 | - |
dc.description.abstract | Owing to the rapid growth of very large-scale integration technology at nanometer scales, cobalt and ruthenium interconnects are being used to solve the high-resistivity copper problem. However, with such interconnects, carbon contamination can occur during chemical vapor deposition and atomic layer deposition. Bipolar (BP) high-power impulse magnetron sputtering (HiPIMS) with a high ionization rate is an excellent vacuum process for depositing low-resistivity thin films. In this study, low-resistivity cobalt, ruthenium, and copper thin films were deposited using BP-HiPIMS, HiPIMS, and direct-current magnetron sputtering (DCMS). The resistivities of the cobalt, ruthenium, and copper thin films (<10 nm) deposited via BP-HiPIMS were 91.5, 75, and 35%, respectively, lower than the resistivities of the same film materials deposited using direct-current MS. To solve the low pass-through flux of cobalt, the target temperature was raised to the Curie temperature (approximately 1100 degrees C) using a thermal insulation backplate (Ti-6Al-4V), resulting in a resistivity reduction of about 73%. The study provides a novel method for the vacuum deposition of cobalt and ruthenium thin films. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.subject | MEAN FREE-PATH | - |
dc.subject | TEMPERATURE | - |
dc.subject | TARGET | - |
dc.subject | MODEL | - |
dc.title | Low-Resistivity Cobalt and Ruthenium Ultra-Thin Film Deposition Using Bipolar HiPIMS Technique | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lim, Sang-Ho | - |
dc.identifier.doi | 10.1149/2162-8777/ac5805 | - |
dc.identifier.scopusid | 2-s2.0-85126466693 | - |
dc.identifier.wosid | 000765534700001 | - |
dc.identifier.bibliographicCitation | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, v.11, no.3 | - |
dc.relation.isPartOf | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | - |
dc.citation.title | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | - |
dc.citation.volume | 11 | - |
dc.citation.number | 3 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | MEAN FREE-PATH | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | TARGET | - |
dc.subject.keywordPlus | MODEL | - |
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