Analytical Model of Contact Resistance in Vertically Stacked Nanosheet FETs for Sub-3-nm Technology Node
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jung, Seung-Geun | - |
dc.contributor.author | Kim, Jeong-Kyu | - |
dc.contributor.author | Yu, Hyun-Yong | - |
dc.date.accessioned | 2022-05-09T15:41:52Z | - |
dc.date.available | 2022-05-09T15:41:52Z | - |
dc.date.created | 2022-05-09 | - |
dc.date.issued | 2022-03 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/140845 | - |
dc.description.abstract | For the first time, a novel analytical model of contact resistance (R-contact) in vertically stacked nanosheet FETs (NSHFETs) with a silicide/Si (100) contact for a sub-3-nm node is presented. Generally, R-contact consists of the interface resistance(R-interface) and spreading resistance (R-sprea(d)). Herein, a new model of R-interface of silicide/Si (100) contact, which simultaneously considers the source/drain (S/D) doping concentration (N-si), Schottky barrier height (SBH), and SBH lowering, is demonstrated simultaneously. In addition, a new model of R(spread )that divides S/D into multiple resistance components for vertically stacked NSHFETs is suggested. In vertically stacked NSHFET with 3-nm node, for TiSi2/n-Si (100) and NiPtSi2/p-Si (100) contacts, R-spread shows more than similar to 50.0% higher values compared to R-interface. On the other hand, 3-nm node FinFET with TiSi2/n-Si (100) and NiPtSi2/p-Si (100) contacts, R-spread shows more than similar to 53.7% lower values compared to R-contact. The results show that R-spread becomes dominant in R-contact compared to R-interface when using R-s(pread) NSHFETs, in contrast to the conventional FinFETs in which R-interface is dominant in R-contact. The high R-spread of the NSHFET is mainly caused by the low nanosheet thickness and vertical pitch between the nanosheets. This study provides critical insights into the design of the source/drain of NSHFET for sub-3-nm CMOS technology. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | SCHOTTKY-BARRIER HEIGHT | - |
dc.subject | N-TYPE | - |
dc.subject | SERIES RESISTANCE | - |
dc.subject | SI | - |
dc.subject | DEPENDENCE | - |
dc.subject | INTERFACES | - |
dc.subject | SILICIDE | - |
dc.subject | COSI2 | - |
dc.subject | NISI | - |
dc.title | Analytical Model of Contact Resistance in Vertically Stacked Nanosheet FETs for Sub-3-nm Technology Node | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Yu, Hyun-Yong | - |
dc.identifier.doi | 10.1109/TED.2022.3143473 | - |
dc.identifier.scopusid | 2-s2.0-85124101780 | - |
dc.identifier.wosid | 000751484900001 | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.69, no.3, pp.930 - 935 | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.citation.title | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.citation.volume | 69 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 930 | - |
dc.citation.endPage | 935 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | SCHOTTKY-BARRIER HEIGHT | - |
dc.subject.keywordPlus | N-TYPE | - |
dc.subject.keywordPlus | SERIES RESISTANCE | - |
dc.subject.keywordPlus | SI | - |
dc.subject.keywordPlus | DEPENDENCE | - |
dc.subject.keywordPlus | INTERFACES | - |
dc.subject.keywordPlus | SILICIDE | - |
dc.subject.keywordPlus | COSI2 | - |
dc.subject.keywordPlus | NISI | - |
dc.subject.keywordAuthor | Contact resistance | - |
dc.subject.keywordAuthor | contact resistivity | - |
dc.subject.keywordAuthor | contact size | - |
dc.subject.keywordAuthor | drain | - |
dc.subject.keywordAuthor | gate-all around FET (GAAFET) | - |
dc.subject.keywordAuthor | nanosheet FET (NSHFET) | - |
dc.subject.keywordAuthor | silicide | - |
dc.subject.keywordAuthor | source | - |
dc.subject.keywordAuthor | spreading resistance | - |
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