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Reconfiguration of operation modes in silicon nanowire field-effect transistors by electrostatic virtual dopingopen access

Authors
Kim, TaekhamLim, DoohyeokSon, JaeminCho, KyoungahKim, Sangsig
Issue Date
8-10월-2022
Publisher
IOP Publishing Ltd
Keywords
reconfigurable field-effect transistors; electrostatic doping; silicon nanowires; polarity control
Citation
NANOTECHNOLOGY, v.33, no.41
Indexed
SCIE
SCOPUS
Journal Title
NANOTECHNOLOGY
Volume
33
Number
41
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/142713
DOI
10.1088/1361-6528/ac7dae
ISSN
0957-4484
Abstract
In this study, we perform reconfigurable n- and p-channel operations of a tri-top-gate field-effect transistor (FET) made of a p(+)-i-n(+) silicon nanowire (SiNW). In the reconfigurable FET (RFET), two polarity gates and one control gate induce virtual electrostatic doping in the SiNW channel. The polarity gates are electrically connected to each other and program the channel type, while the control gate modulates the flow of charge carriers in the SiNW channel. The SiNW RFET features simple device design, symmetrical electrical characteristics in the n- and p-channel operation modes using p(+)-i-n(+) diode characteristics, and both operation modes exhibit high ON/OFF ratios (similar to 10(6)) and high ON currents (similar to 1 mu A mu m(-1)). The proposed device is demonstrated experimentally using a fully CMOS-compatible top-down processes.
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