Understanding random telegraph noise in two-dimensional BP/ReS2 heterointerface
DC Field | Value | Language |
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dc.contributor.author | Lee, Byung Chul | - |
dc.contributor.author | Seo, Youkyung | - |
dc.contributor.author | Kim, Chulmin | - |
dc.contributor.author | Kim, Yeeun | - |
dc.contributor.author | Joo, Min-Kyu | - |
dc.contributor.author | Kim, Gyu-Tae | - |
dc.date.accessioned | 2022-08-11T00:59:39Z | - |
dc.date.available | 2022-08-11T00:59:39Z | - |
dc.date.created | 2022-08-10 | - |
dc.date.issued | 2022-06-20 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/142797 | - |
dc.description.abstract | Black phosphorus (BP)-based broken gap heterojunctions have attracted significant attention mainly owing to its wide thickness-dependent Fermi level, offering opportunities to demonstrate various carrier transport characteristics and high performing optoelectronic applications. However, the interfacial effects on the carrier scattering mechanism of the two-dimensional (2D) broken gap heterojunctions are unclear. Herein, we discuss the origin of random telegraph noise of multilayer BP/ReS2 heterojunction diode, in particular, at the direct tunneling (DT) conduction regime. The gate-tunable diode characteristic of BP/ReS2 heterojunction allows one to unveil systematically the transition of the charge fluctuation mechanism from drift-diffusion to the DT regime. Unlike individual BP and ReS2 devices, the current noise histogram obtained from the BP/ReS2 heterojunction device exhibits exclusively two dominant peaks at the DT regime. We ascribed this distinct low-frequency noise feature representing the presence of random telegraph signal to the BP/ReS2 interfacial traps by taking into account of the inherent direct tunneling current conduction mechanism. In addition, the electrostatic bias-dependent power spectrum density manifests clearly that the dominant scattering mechanism is the carrier number fluctuation rather than tunneling barrier height fluctuation at the BP/ReS2 heterointerface. This study elucidates the carrier transport and the charge fluctuation mechanism at the 2D heterostructure interface. Published under an exclusive license by AIP Publishing. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AIP Publishing | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | BLACK PHOSPHORUS | - |
dc.subject | GRAPHENE | - |
dc.subject | HETEROJUNCTION | - |
dc.subject | MECHANICS | - |
dc.subject | DEVICE | - |
dc.title | Understanding random telegraph noise in two-dimensional BP/ReS2 heterointerface | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Gyu-Tae | - |
dc.identifier.doi | 10.1063/5.0093688 | - |
dc.identifier.scopusid | 2-s2.0-85133070420 | - |
dc.identifier.wosid | 000814789700005 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.120, no.25 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 120 | - |
dc.citation.number | 25 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | BLACK PHOSPHORUS | - |
dc.subject.keywordPlus | GRAPHENE | - |
dc.subject.keywordPlus | HETEROJUNCTION | - |
dc.subject.keywordPlus | MECHANICS | - |
dc.subject.keywordPlus | DEVICE | - |
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