Gate control of interlayer exchange coupling in ferromagnetic semiconductor trilayers with perpendicular magnetic anisotropy
DC Field | Value | Language |
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dc.contributor.author | Chongthanaphisut, Phunvira | - |
dc.contributor.author | Lee, Kyung Jae | - |
dc.contributor.author | Lee, Sanghoon | - |
dc.contributor.author | Liu, X. | - |
dc.contributor.author | Dobrowolska, M. | - |
dc.contributor.author | Furdyna, J. K. | - |
dc.date.accessioned | 2022-08-11T07:41:16Z | - |
dc.date.available | 2022-08-11T07:41:16Z | - |
dc.date.created | 2022-08-10 | - |
dc.date.issued | 2022-04-01 | - |
dc.identifier.issn | 2166-532X | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/142834 | - |
dc.description.abstract | Interlayer exchange coupling (IEC) has been intensively investigated in magnetic multilayers, owing to its potential for magnetic memory and logic device applications. Although IEC can be reliably obtained in metallic ferromagnetic multilayer systems by adjusting structural parameters, it is difficult to achieve gate control of IEC in metallic systems due to their large carrier densities. Here, we demonstrate that IEC can be reliably controlled in ferromagnetic semiconductor (FMS) trilayer structures by means of an external gate voltage. We show that, by designing a quantum-well-type trilayer structure based on (Ga,Mn)(As,P) FMSs and adapting the ionic liquid gating technique, the carrier density in the nonmagnetic spacer of the system can be modulated with gate voltages of only a few volts. Due to this capability, we are able to vary the strength of IEC by as much as 49% in the FMS trilayer. These results provide important insights into design of spintronic devices and their energy-efficient operation. (C) 2022 Author(s). | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AIP Publishing | - |
dc.subject | THICKNESS DEPENDENCE | - |
dc.subject | CURIE-TEMPERATURE | - |
dc.subject | ATOMIC LAYERS | - |
dc.subject | BAND | - |
dc.subject | (GA | - |
dc.subject | MAGNETORESISTANCE | - |
dc.subject | MANIPULATION | - |
dc.subject | REVERSAL | - |
dc.subject | VECTOR | - |
dc.subject | TORQUE | - |
dc.title | Gate control of interlayer exchange coupling in ferromagnetic semiconductor trilayers with perpendicular magnetic anisotropy | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Sanghoon | - |
dc.identifier.doi | 10.1063/5.0079245 | - |
dc.identifier.scopusid | 2-s2.0-85128873489 | - |
dc.identifier.wosid | 000822830300001 | - |
dc.identifier.bibliographicCitation | APL MATERIALS, v.10, no.4 | - |
dc.relation.isPartOf | APL MATERIALS | - |
dc.citation.title | APL MATERIALS | - |
dc.citation.volume | 10 | - |
dc.citation.number | 4 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | Y | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | THICKNESS DEPENDENCE | - |
dc.subject.keywordPlus | CURIE-TEMPERATURE | - |
dc.subject.keywordPlus | ATOMIC LAYERS | - |
dc.subject.keywordPlus | BAND | - |
dc.subject.keywordPlus | (GA | - |
dc.subject.keywordPlus | MAGNETORESISTANCE | - |
dc.subject.keywordPlus | MANIPULATION | - |
dc.subject.keywordPlus | REVERSAL | - |
dc.subject.keywordPlus | VECTOR | - |
dc.subject.keywordPlus | TORQUE | - |
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