Transparent, Flexible, and Low-Operating-Voltage Resistive Switching Memory Based on Al2O3/IZO Multilayer
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Jaemin | - |
dc.contributor.author | Huh, Daihong | - |
dc.contributor.author | Son, Soomin | - |
dc.contributor.author | Kim, Wonjoong | - |
dc.contributor.author | Ju, Sucheol | - |
dc.contributor.author | Lee, Heon | - |
dc.date.accessioned | 2022-08-12T12:40:39Z | - |
dc.date.available | 2022-08-12T12:40:39Z | - |
dc.date.created | 2022-08-12 | - |
dc.date.issued | 2022-07 | - |
dc.identifier.issn | 2056-6646 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/142907 | - |
dc.description.abstract | In this study, a different number of indium zinc oxide (IZO) interlayers are fabricated into Al2O3-based transparent resistive switching memory on a transparent indium tin oxide (ITO)/glass substrate at room temperature. Al2O3/IZO multilayer transparent memory has a transmittance of at least 65% in the wavelength range of 400-900 nm. In addition, the Al2O3/IZO multilayer transparent memory can achieve an electroforming voltage that is 35.7% lower than that of ITO/pure-Al2O3/IZO transparent memory. The fabricated Al2O3/IZO multilayer transparent memory exhibits typical bipolar resistive switching behavior, regardless of the number of IZO interlayers. Also, the fabricated Al2O3/IZO multilayer transparent memory has a low operating voltage within +/- 1.5 V. In addition, a flexible Al2O3/IZO multilayer transparent memory is fabricated using the same process on ITO-coated polyethylene terephthalate. The fabricated flexible transparent memory also maintains the resistive switching characteristics during the bending state. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.subject | MECHANISMS | - |
dc.subject | DEVICES | - |
dc.title | Transparent, Flexible, and Low-Operating-Voltage Resistive Switching Memory Based on Al2O3/IZO Multilayer | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Heon | - |
dc.identifier.doi | 10.1002/gch2.202100118 | - |
dc.identifier.wosid | 000800860900001 | - |
dc.identifier.bibliographicCitation | GLOBAL CHALLENGES, v.6, no.7 | - |
dc.relation.isPartOf | GLOBAL CHALLENGES | - |
dc.citation.title | GLOBAL CHALLENGES | - |
dc.citation.volume | 6 | - |
dc.citation.number | 7 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | Y | - |
dc.description.journalRegisteredClass | scie | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalWebOfScienceCategory | Multidisciplinary Sciences | - |
dc.subject.keywordPlus | MECHANISMS | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordAuthor | Al2O3/IZO multilayer | - |
dc.subject.keywordAuthor | electroforming | - |
dc.subject.keywordAuthor | resistive switching | - |
dc.subject.keywordAuthor | transparent memory | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.