Transparent, Flexible, and Low-Operating-Voltage Resistive Switching Memory Based on Al2O3/IZO Multilayeropen access
- Authors
- Park, Jaemin; Huh, Daihong; Son, Soomin; Kim, Wonjoong; Ju, Sucheol; Lee, Heon
- Issue Date
- 7월-2022
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- Al2O3/IZO multilayer; electroforming; resistive switching; transparent memory
- Citation
- GLOBAL CHALLENGES, v.6, no.7
- Indexed
- SCIE
- Journal Title
- GLOBAL CHALLENGES
- Volume
- 6
- Number
- 7
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/142907
- DOI
- 10.1002/gch2.202100118
- ISSN
- 2056-6646
- Abstract
- In this study, a different number of indium zinc oxide (IZO) interlayers are fabricated into Al2O3-based transparent resistive switching memory on a transparent indium tin oxide (ITO)/glass substrate at room temperature. Al2O3/IZO multilayer transparent memory has a transmittance of at least 65% in the wavelength range of 400-900 nm. In addition, the Al2O3/IZO multilayer transparent memory can achieve an electroforming voltage that is 35.7% lower than that of ITO/pure-Al2O3/IZO transparent memory. The fabricated Al2O3/IZO multilayer transparent memory exhibits typical bipolar resistive switching behavior, regardless of the number of IZO interlayers. Also, the fabricated Al2O3/IZO multilayer transparent memory has a low operating voltage within +/- 1.5 V. In addition, a flexible Al2O3/IZO multilayer transparent memory is fabricated using the same process on ITO-coated polyethylene terephthalate. The fabricated flexible transparent memory also maintains the resistive switching characteristics during the bending state.
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Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
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