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SWIR imaging using PbS QD photodiode array sensorsopen access

Authors
Chang, SehwanJin, JunyoungKyhm, JihoonPark, Tae HwanAhn, JongtaePark, Sung-Yul L.Park, Suk InHwang, Do KyungChoi, Sang SooSeong, Tae-YeonSong, Jin-DongHwang, Gyu Weon
Issue Date
6-6월-2022
Publisher
Optica Publishing Group
Citation
OPTICS EXPRESS, v.30, no.12, pp.20659 - 20665
Indexed
SCIE
SCOPUS
Journal Title
OPTICS EXPRESS
Volume
30
Number
12
Start Page
20659
End Page
20665
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/142973
DOI
10.1364/OE.459090
ISSN
1094-4087
Abstract
We fabricated a 1 x 10 PbS QD photodiode array with multiple stacked QD layers with high-resolution patterning using a customized photolithographic process. The array showed the average responsivity of 5.54 x 10(-3) A/W and 1.20 x 10(-2) A/W at 0 V and -1 V under 1310- nm short-wavelength infrared (SWIR) illumination. The standard deviation of the pixel responsivity was under 10%, confirming the uniformity of the fabrication process. The response time was 2.2 +/- 0.13 ms, and the bandwidth was 159.1 Hz. A prototype 1310-nm SWIR imager demonstrated that the QD photodiode-based SWIR image sensor is a cost-effective and practical alternative for III-V SWIR image sensors. (C) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement
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공과대학 (신소재공학부)
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