Bias-stress stability of top-gate coplanar a-ITGZO TFTs with HfO2 and HfAlO gate dielectrics
DC Field | Value | Language |
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dc.contributor.author | Kong, Heesung | - |
dc.contributor.author | Cho, Kyoungah | - |
dc.contributor.author | Lee, Hosang | - |
dc.contributor.author | Lee, Seungjun | - |
dc.contributor.author | Lim, Junhyung | - |
dc.contributor.author | Kim, Sangsig | - |
dc.date.accessioned | 2022-08-13T02:40:59Z | - |
dc.date.available | 2022-08-13T02:40:59Z | - |
dc.date.created | 2022-08-12 | - |
dc.date.issued | 2022-06-01 | - |
dc.identifier.issn | 1369-8001 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/142978 | - |
dc.description.abstract | In this study, we investigated the electrical characteristics of amorphous indium-tin-gallium-zinc-oxide thinfilm transistors (TFTs) (a-ITGZO TFTs) with HfO2 and HfAlO gate dielectrics. The mobilities of the a-ITGZO TFTs with HfO2 and HfAlO were 32.3 and 26.4 cm(2)/V &.s, respectively. The TFT with HfO2 showed a subthreshold swing (SS) of 206 mV/dec and a hysteresis window of 0.60 V, and the TFT with HfAlO showed an SS of 160 mV/dec and a hysteresis window of 0.12 V. The hysteresis windows were related to the interface trap density. The TFT with HfO2 was more vulnerable to positive bias stress; in contrast, the TFT with HfAlO operated stably even after it experienced positive and negative bias stresses for 3000 s. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCI LTD | - |
dc.subject | THIN-FILM TRANSISTORS | - |
dc.subject | TEMPERATURE FABRICATION | - |
dc.subject | HFO2/AL2O3 | - |
dc.title | Bias-stress stability of top-gate coplanar a-ITGZO TFTs with HfO2 and HfAlO gate dielectrics | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Sangsig | - |
dc.identifier.doi | 10.1016/j.mssp.2022.106527 | - |
dc.identifier.scopusid | 2-s2.0-85123719201 | - |
dc.identifier.wosid | 000804831300007 | - |
dc.identifier.bibliographicCitation | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v.143 | - |
dc.relation.isPartOf | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | - |
dc.citation.title | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | - |
dc.citation.volume | 143 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | TEMPERATURE FABRICATION | - |
dc.subject.keywordPlus | HFO2/AL2O3 | - |
dc.subject.keywordAuthor | Amorphous indium-tin-gallium-zinc-oxide | - |
dc.subject.keywordAuthor | Hafnium oxide | - |
dc.subject.keywordAuthor | Hafnium aluminum oxide | - |
dc.subject.keywordAuthor | Hysteresis | - |
dc.subject.keywordAuthor | Positive gate-bias stress | - |
dc.subject.keywordAuthor | Negative gate-bias stress | - |
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