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A 15 Gb/s Non-Return-to-Zero Transmitter With 1-Tap Pre-Emphasis Feed-Forward Equalizer for Low-Power Ground Terminated Memory Interfaces

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dc.contributor.authorKwon, Youngwook-
dc.contributor.authorPark, Hyunsu-
dc.contributor.authorChoi, Yoonjae-
dc.contributor.authorSim, Jincheol-
dc.contributor.authorChoi, Jonghyuck-
dc.contributor.authorPark, Seungwoo-
dc.contributor.authorKim, Chulwoo-
dc.date.accessioned2022-08-13T08:40:17Z-
dc.date.available2022-08-13T08:40:17Z-
dc.date.created2022-08-12-
dc.date.issued2022-06-
dc.identifier.issn1549-7747-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/143009-
dc.description.abstractThis brief presents a 1-tap pre-emphasis transmitter (TX) for a single-ended ground-terminated memory interface with 28 nm complementary metal-oxide-semiconductor (CMOS) technology. By employing a charge pump scheme, a voltage level below ground was used to remove inter-symbol interference (ISI). Encoded with the unit interval (UI) delayed data, the proposed equalization technique increases the vertical voltage margin for the receiver (RX) compared to conventional feed-forward equalization (FFE). In addition, the short current after equalization was removed, and impedance matching for reflection was facilitated. The data rate of the proposed work is 15 Gb/s, and the data path power dissipation for the entire design is 20.3 mW. The measured energy efficiency is 1.35 pJ/bit, and the total area occupation is 0.008 mm(2).-
dc.languageEnglish-
dc.language.isoen-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.subjectTRANSCEIVER-
dc.subjectDRAM-
dc.subjectCMOS-
dc.titleA 15 Gb/s Non-Return-to-Zero Transmitter With 1-Tap Pre-Emphasis Feed-Forward Equalizer for Low-Power Ground Terminated Memory Interfaces-
dc.typeArticle-
dc.contributor.affiliatedAuthorKim, Chulwoo-
dc.identifier.doi10.1109/TCSII.2022.3159769-
dc.identifier.scopusid2-s2.0-85126559183-
dc.identifier.wosid000804726500037-
dc.identifier.bibliographicCitationIEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, v.69, no.6, pp.2737 - 2741-
dc.relation.isPartOfIEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS-
dc.citation.titleIEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS-
dc.citation.volume69-
dc.citation.number6-
dc.citation.startPage2737-
dc.citation.endPage2741-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.subject.keywordPlusTRANSCEIVER-
dc.subject.keywordPlusDRAM-
dc.subject.keywordPlusCMOS-
dc.subject.keywordAuthorVoltage-
dc.subject.keywordAuthorCharge pumps-
dc.subject.keywordAuthorCapacitors-
dc.subject.keywordAuthorTransmitters-
dc.subject.keywordAuthorImpedance-
dc.subject.keywordAuthorClocks-
dc.subject.keywordAuthorMOS devices-
dc.subject.keywordAuthorAsymmetric interface-
dc.subject.keywordAuthorCMOS-
dc.subject.keywordAuthordynamic random-access memory (DRAM)-
dc.subject.keywordAuthorequalization-
dc.subject.keywordAuthortransmitter-
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