A 15 Gb/s Non-Return-to-Zero Transmitter With 1-Tap Pre-Emphasis Feed-Forward Equalizer for Low-Power Ground Terminated Memory Interfaces
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kwon, Youngwook | - |
dc.contributor.author | Park, Hyunsu | - |
dc.contributor.author | Choi, Yoonjae | - |
dc.contributor.author | Sim, Jincheol | - |
dc.contributor.author | Choi, Jonghyuck | - |
dc.contributor.author | Park, Seungwoo | - |
dc.contributor.author | Kim, Chulwoo | - |
dc.date.accessioned | 2022-08-13T08:40:17Z | - |
dc.date.available | 2022-08-13T08:40:17Z | - |
dc.date.created | 2022-08-12 | - |
dc.date.issued | 2022-06 | - |
dc.identifier.issn | 1549-7747 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/143009 | - |
dc.description.abstract | This brief presents a 1-tap pre-emphasis transmitter (TX) for a single-ended ground-terminated memory interface with 28 nm complementary metal-oxide-semiconductor (CMOS) technology. By employing a charge pump scheme, a voltage level below ground was used to remove inter-symbol interference (ISI). Encoded with the unit interval (UI) delayed data, the proposed equalization technique increases the vertical voltage margin for the receiver (RX) compared to conventional feed-forward equalization (FFE). In addition, the short current after equalization was removed, and impedance matching for reflection was facilitated. The data rate of the proposed work is 15 Gb/s, and the data path power dissipation for the entire design is 20.3 mW. The measured energy efficiency is 1.35 pJ/bit, and the total area occupation is 0.008 mm(2). | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | TRANSCEIVER | - |
dc.subject | DRAM | - |
dc.subject | CMOS | - |
dc.title | A 15 Gb/s Non-Return-to-Zero Transmitter With 1-Tap Pre-Emphasis Feed-Forward Equalizer for Low-Power Ground Terminated Memory Interfaces | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Chulwoo | - |
dc.identifier.doi | 10.1109/TCSII.2022.3159769 | - |
dc.identifier.scopusid | 2-s2.0-85126559183 | - |
dc.identifier.wosid | 000804726500037 | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, v.69, no.6, pp.2737 - 2741 | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS | - |
dc.citation.title | IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS | - |
dc.citation.volume | 69 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 2737 | - |
dc.citation.endPage | 2741 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | TRANSCEIVER | - |
dc.subject.keywordPlus | DRAM | - |
dc.subject.keywordPlus | CMOS | - |
dc.subject.keywordAuthor | Voltage | - |
dc.subject.keywordAuthor | Charge pumps | - |
dc.subject.keywordAuthor | Capacitors | - |
dc.subject.keywordAuthor | Transmitters | - |
dc.subject.keywordAuthor | Impedance | - |
dc.subject.keywordAuthor | Clocks | - |
dc.subject.keywordAuthor | MOS devices | - |
dc.subject.keywordAuthor | Asymmetric interface | - |
dc.subject.keywordAuthor | CMOS | - |
dc.subject.keywordAuthor | dynamic random-access memory (DRAM) | - |
dc.subject.keywordAuthor | equalization | - |
dc.subject.keywordAuthor | transmitter | - |
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