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A 4.5 Gb/s/pin transceiver with hybrid inter-symbol interference and far-end crosstalk equalization for next-generation high-bandwidth memory interface

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dc.contributor.authorYoon, Kungryun-
dc.contributor.authorPark, Hyunsu-
dc.contributor.authorChoi, Yoonjae-
dc.contributor.authorSim, Jincheol-
dc.contributor.authorChoi, Jonghyuck-
dc.contributor.authorKim, Chulwoo-
dc.date.accessioned2022-08-13T22:40:30Z-
dc.date.available2022-08-13T22:40:30Z-
dc.date.created2022-08-12-
dc.date.issued2022-05-
dc.identifier.issn0013-5194-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/143080-
dc.description.abstractA 4.5 Gb/s/pin transceiver capable of eliminating the inter-symbol interference (ISI) and far-end crosstalk (FEXT) in a hybrid scheme with low power and small area for next-generation high-bandwidth memory (HBM) interfaces is presented. Built around the combination of two ISI and FEXT equalization topologies, the transmitter (TX) energy efficiently reduces data-dependent jitter (DDJ) and crosstalk-induced jitter (CIJ) by using the compensation signal generated from edge detectors (ED) to ensure the sampling margin. The prototype transceiver, implemented using a 28-nm complementary metal-oxide semiconductor (CMOS) process, operates over a 3-mm mimicked silicon interposer channel with 21.2-dB loss. It achieves a data rate per density of 9 Gb/s/mu m at a bit error rate (BER) < 10(-12) with 0.23 unit interval (UI) eye width for pseudorandom binary sequence (PRBS)15 data while consuming only 1.46 pJ/bit.-
dc.languageEnglish-
dc.language.isoen-
dc.publisherWILEY-
dc.titleA 4.5 Gb/s/pin transceiver with hybrid inter-symbol interference and far-end crosstalk equalization for next-generation high-bandwidth memory interface-
dc.typeArticle-
dc.contributor.affiliatedAuthorKim, Chulwoo-
dc.identifier.doi10.1049/ell2.12494-
dc.identifier.scopusid2-s2.0-85129071562-
dc.identifier.wosid000789579000001-
dc.identifier.bibliographicCitationELECTRONICS LETTERS, v.58, no.11, pp.420 - 422-
dc.relation.isPartOfELECTRONICS LETTERS-
dc.citation.titleELECTRONICS LETTERS-
dc.citation.volume58-
dc.citation.number11-
dc.citation.startPage420-
dc.citation.endPage422-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.isOpenAccessY-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
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