Impact of Stacking-Up and Scaling-Down Bit Cells in 3D NAND on Their Threshold Voltages
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Dongwoo | - |
dc.contributor.author | Shin, Changhwan | - |
dc.date.accessioned | 2022-08-25T15:41:12Z | - |
dc.date.available | 2022-08-25T15:41:12Z | - |
dc.date.created | 2022-08-25 | - |
dc.date.issued | 2022-07 | - |
dc.identifier.issn | 2072-666X | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/143364 | - |
dc.description.abstract | Over the past few decades, NAND flash memory has advanced with exponentially-increasing bit growth. As bit cells in 3D NAND flash memory are stacked up and scaled down together, some potential challenges should be investigated. In order to reasonably predict those challenges, a TCAD (technology computer-aided design) simulation for 3D NAND structure in mass production has been run. By aggressively stacking-up and scaling-down bit cells in a string, the structure of channel hole was varied from a macaroni to nanowire. This causes the threshold voltage difference (Delta V-th) between the top cell and bottom cell in the same string. In detail, Delta V-th between the top cell and bottom cell mostly depends on the xy-scaling, but the way how Delta V-th is affected is not very dependent on the stack height. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | MDPI | - |
dc.subject | NANOWIRE | - |
dc.title | Impact of Stacking-Up and Scaling-Down Bit Cells in 3D NAND on Their Threshold Voltages | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Shin, Changhwan | - |
dc.identifier.doi | 10.3390/mi13071139 | - |
dc.identifier.scopusid | 2-s2.0-85137169027 | - |
dc.identifier.wosid | 000833766000001 | - |
dc.identifier.bibliographicCitation | MICROMACHINES, v.13, no.7 | - |
dc.relation.isPartOf | MICROMACHINES | - |
dc.citation.title | MICROMACHINES | - |
dc.citation.volume | 13 | - |
dc.citation.number | 7 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | Y | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Instruments & Instrumentation | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Analytical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Instruments & Instrumentation | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | NANOWIRE | - |
dc.subject.keywordAuthor | 3D NAND flash | - |
dc.subject.keywordAuthor | macaroni channel | - |
dc.subject.keywordAuthor | nanowire channel | - |
dc.subject.keywordAuthor | tapered channel | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.