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Performance Analysis of Custom Dual-Finger 250 nm InP HBT Devices for Implementation of 255 GHz Amplifiersopen access
- Authors
- Koh, Yoon Kyeong; Kim, Yang Woo; Kim, Moonil
- Issue Date
- Aug-2022
- Publisher
- MDPI
- Keywords
- InP HBT; multi-finger devices; terahertz amplifiers; terahertz monolithic circuits
- Citation
- ELECTRONICS, v.11, no.16
- Indexed
- SCIE
SCOPUS
- Journal Title
- ELECTRONICS
- Volume
- 11
- Number
- 16
- ISSN
- 2079-9292
- Abstract
- The performances of WR-3.4 monolithic amplifiers fabricated using dual-finger 6 mu m InP HBT devices are investigated. While one amplifier uses the dual-finger devices formed by simply connecting two existing standard single-finger HBTs, the second amplifier uses newly formed devices that share a common collector metal on a single merged device isolation area. The amplifiers using two types of devices based on the identical matching networks are fabricated for on-wafer probing tests. The custom merged-device amplifier shows clear performance advantages over the separate-device amplifier, showing a peak gain of 10.5 dB and the maximum output power of 5.2 dBm at 255 GHz.
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Related Researcher
- Kim, Moon il
- College of Engineering (School of Electrical Engineering)