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Performance Analysis of Custom Dual-Finger 250 nm InP HBT Devices for Implementation of 255 GHz Amplifiersopen access

Authors
Koh, Yoon KyeongKim, Yang WooKim, Moonil
Issue Date
8월-2022
Publisher
MDPI
Keywords
InP HBT; multi-finger devices; terahertz amplifiers; terahertz monolithic circuits
Citation
ELECTRONICS, v.11, no.16
Indexed
SCIE
SCOPUS
Journal Title
ELECTRONICS
Volume
11
Number
16
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/143829
DOI
10.3390/electronics11162614
ISSN
2079-9292
Abstract
The performances of WR-3.4 monolithic amplifiers fabricated using dual-finger 6 mu m InP HBT devices are investigated. While one amplifier uses the dual-finger devices formed by simply connecting two existing standard single-finger HBTs, the second amplifier uses newly formed devices that share a common collector metal on a single merged device isolation area. The amplifiers using two types of devices based on the identical matching networks are fabricated for on-wafer probing tests. The custom merged-device amplifier shows clear performance advantages over the separate-device amplifier, showing a peak gain of 10.5 dB and the maximum output power of 5.2 dBm at 255 GHz.
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Kim, Moon il
공과대학 (전기전자공학부)
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