High output performance of piezoelectric energy harvesters using epitaxial Pb(Zr, Ti)O-3 thin film grown on Si substrate
DC Field | Value | Language |
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dc.contributor.author | Kim, Eun-Ji | - |
dc.contributor.author | Kweon, Sang-Hyo | - |
dc.contributor.author | Nahm, Sahn | - |
dc.contributor.author | Sato, Yukio | - |
dc.contributor.author | Tan, Goon | - |
dc.contributor.author | Kanno, Isaku | - |
dc.date.accessioned | 2022-11-15T12:40:32Z | - |
dc.date.available | 2022-11-15T12:40:32Z | - |
dc.date.created | 2022-11-15 | - |
dc.date.issued | 2022-10-17 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/145476 | - |
dc.description.abstract | For a high power density in piezoelectric energy harvesters, both a large direct piezoelectric coefficient (e(31,)(f)) and a small relative permittivity constant (epsilon(r,33)) are required. This study proposed an energy harvesting device made of an epitaxial Pb(Zr, Ti)O-3 (PZT) thin film grown on a Si substrate. The epitaxial PZT thin film is deposited on the Si substrate by RF magnetron sputtering. The epitaxial PZT thin film grown on Si substrate has a epsilon(r,33) constant of 318. The output voltage as a function of input displacement was measured using a shaker to evaluate the direct e(31,)(f) coefficients and energy harvester output characteristics. According to the figure of merit defined as (e(31,)(f))(2)/epsilon(0)epsilon(r,33), the epitaxial PZT/Si cantilever is 32 GPa. At a resonant frequency of 373 Hz under an acceleration of 11 m/s(2), the epitaxial PZT/Si cantilever has a high output power of 40.93 mu W and power density of 108.3 mu W/cm(2)/g(2) without any damage, which is very promising for high power energy harvester applications. Published under an exclusive license by AIP Publishing. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AIP Publishing | - |
dc.subject | COEFFICIENT E(31,F) | - |
dc.subject | MEMS | - |
dc.title | High output performance of piezoelectric energy harvesters using epitaxial Pb(Zr, Ti)O-3 thin film grown on Si substrate | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Nahm, Sahn | - |
dc.identifier.doi | 10.1063/5.0105103 | - |
dc.identifier.scopusid | 2-s2.0-85140438355 | - |
dc.identifier.wosid | 000870545400004 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.121, no.16 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 121 | - |
dc.citation.number | 16 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | COEFFICIENT E(31,F) | - |
dc.subject.keywordPlus | MEMS | - |
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