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High output performance of piezoelectric energy harvesters using epitaxial Pb(Zr, Ti)O-3 thin film grown on Si substrate

Authors
Kim, Eun-JiKweon, Sang-HyoNahm, SahnSato, YukioTan, GoonKanno, Isaku
Issue Date
17-10월-2022
Publisher
AIP Publishing
Citation
APPLIED PHYSICS LETTERS, v.121, no.16
Indexed
SCIE
SCOPUS
Journal Title
APPLIED PHYSICS LETTERS
Volume
121
Number
16
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/145476
DOI
10.1063/5.0105103
ISSN
0003-6951
Abstract
For a high power density in piezoelectric energy harvesters, both a large direct piezoelectric coefficient (e(31,)(f)) and a small relative permittivity constant (epsilon(r,33)) are required. This study proposed an energy harvesting device made of an epitaxial Pb(Zr, Ti)O-3 (PZT) thin film grown on a Si substrate. The epitaxial PZT thin film is deposited on the Si substrate by RF magnetron sputtering. The epitaxial PZT thin film grown on Si substrate has a epsilon(r,33) constant of 318. The output voltage as a function of input displacement was measured using a shaker to evaluate the direct e(31,)(f) coefficients and energy harvester output characteristics. According to the figure of merit defined as (e(31,)(f))(2)/epsilon(0)epsilon(r,33), the epitaxial PZT/Si cantilever is 32 GPa. At a resonant frequency of 373 Hz under an acceleration of 11 m/s(2), the epitaxial PZT/Si cantilever has a high output power of 40.93 mu W and power density of 108.3 mu W/cm(2)/g(2) without any damage, which is very promising for high power energy harvester applications. Published under an exclusive license by AIP Publishing.
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