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Improved threshold switching characteristics of vanadium oxide/ oxynitride-based multilayer selector in a cross-point array
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kang, Dae Yun | - |
| dc.contributor.author | Rani, Adila | - |
| dc.contributor.author | Yoo, Kyoung Joung | - |
| dc.contributor.author | Kim, Tae Geun | - |
| dc.date.accessioned | 2022-11-17T11:40:19Z | - |
| dc.date.available | 2022-11-17T11:40:19Z | - |
| dc.date.created | 2022-11-17 | - |
| dc.date.issued | 2022-11-20 | - |
| dc.identifier.issn | 0925-8388 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/145630 | - |
| dc.description.abstract | We developed a selector device with the bi-directional threshold switching characteristics of vanadium oxide (VOx) by implementing vanadium oxynitride (VOx:Ny) in a sandwich structure. The proposed device with the Pt/VOx:Ny/VOx/VOx:Ny/Pt structure as opposed to a cell with a Pt/VOx/Pt structure exhibits lower off-current and stable switching characteristics. The elements of the device were analyzed using highresolution transmission electron microscopy and X-ray photoelectron spectroscopy, and its memory characteristics were verified by applying the Pt/VOx:Ny/VOx/VOx:Ny/Pt selector to amorphous indium-galliumzinc oxide-based resistive switching (RS) devices in the 1 selector-1 ReRAM structure. Our device shows stable RS properties over 100 DC cycles and > 106 AC cycles, an improved ON/OFF ratio (-67), a high switching speed (< 110 ns), and a rectification ratio of -1 x 103 when the read margin is 10%. (c) 2022 Elsevier B.V. All rights reserved. | - |
| dc.language | English | - |
| dc.language.iso | en | - |
| dc.publisher | ELSEVIER SCIENCE SA | - |
| dc.subject | RANDOM-ACCESS MEMORY | - |
| dc.subject | PHASE-TRANSITION | - |
| dc.subject | FORMING-FREE | - |
| dc.subject | VO2 | - |
| dc.subject | RATIO | - |
| dc.title | Improved threshold switching characteristics of vanadium oxide/ oxynitride-based multilayer selector in a cross-point array | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Kim, Tae Geun | - |
| dc.identifier.doi | 10.1016/j.jallcom.2022.166192 | - |
| dc.identifier.scopusid | 2-s2.0-85134529102 | - |
| dc.identifier.wosid | 000830915200002 | - |
| dc.identifier.bibliographicCitation | JOURNAL OF ALLOYS AND COMPOUNDS, v.922 | - |
| dc.relation.isPartOf | JOURNAL OF ALLOYS AND COMPOUNDS | - |
| dc.citation.title | JOURNAL OF ALLOYS AND COMPOUNDS | - |
| dc.citation.volume | 922 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Chemistry | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Metallurgy & Metallurgical Engineering | - |
| dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Metallurgy & Metallurgical Engineering | - |
| dc.subject.keywordPlus | RANDOM-ACCESS MEMORY | - |
| dc.subject.keywordPlus | PHASE-TRANSITION | - |
| dc.subject.keywordPlus | FORMING-FREE | - |
| dc.subject.keywordPlus | VO2 | - |
| dc.subject.keywordPlus | RATIO | - |
| dc.subject.keywordAuthor | Vanadium oxynitride | - |
| dc.subject.keywordAuthor | Selector device | - |
| dc.subject.keywordAuthor | Resistive switching | - |
| dc.subject.keywordAuthor | Insulator -metal transition material | - |
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