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Temperature-Dependent Electrical Characteristics of p-Channel Mode Feedback Field-Effect Transistorsopen access

Authors
Park, TaehoLee, JaehwanSon, JaeminJeon, JuheeShin, YeonwooCho, KyoungahKim, Sangsig
Issue Date
2022
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords
Field-effect transistor; positive feedback loop; temperature-dependent; simulation
Citation
IEEE ACCESS, v.10, pp.101458 - 101464
Indexed
SCIE
SCOPUS
Journal Title
IEEE ACCESS
Volume
10
Start Page
101458
End Page
101464
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/146075
DOI
10.1109/ACCESS.2022.3208116
ISSN
2169-3536
Abstract
In this study, the temperature-dependent electrical characteristics of p-channel mode feedback field-effect transistors (FBFETs) were examined at temperatures ranging from 250 to 425 K. Their steep subthreshold swings of less than 1 mV/dec were maintained even at temperatures up to 400 K. As the temperature increased to 400 K, the latch-up voltage shifted from -0.951 to -0.613 V, which was caused by a reduction in the potential barriers in the channels of the FBFETs. High I-on/I-off ratios above 108 were maintained in the temperature range of 250 to 400 K. However, at temperatures over 400 K, the FBFETs were turned on regardless of the gate voltages owing to the generation of a thermally induced positive feedback loop.
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