Detailed Information

Cited 0 time in webofscience Cited 0 time in scopus
Metadata Downloads

A Dual-Domain Dynamic Reference Sensing for Reliable Read Operation in SOT-MRAM

Authors
Kim, JooyoonJang, YunhoKim, TaehwanPark, Jongsun
Issue Date
5월-2022
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords
Sensors; Voltage; Reliability; Time-domain analysis; Magnetic tunneling; Random access memory; Integrated circuit reliability; Sensing circuit; sensing margin; dual-domain; dynamic reference; spintronics
Citation
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, v.69, no.5, pp.2049 - 2059
Indexed
SCIE
SCOPUS
Journal Title
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
Volume
69
Number
5
Start Page
2049
End Page
2059
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/146642
DOI
10.1109/TCSI.2022.3148123
ISSN
1549-8328
Abstract
Although spin orbit torque magnetic random access memory (SOT-MRAM) is one of the strong candidates for next-generation embedded memories, the degradation of read margin due to low tunnel magnetoresistance ratio (TMR) with process variations has been a large concern. In this paper, we present the dual-domain dynamic reference (DDDR) sensing scheme, where the reference voltage can be dynamically changed based on the combined voltage and time domain sensing to increase the sensing margin. The Half Schmitt trigger and sample & hold circuits are efficiently employed to generate data-dependent reference voltages and to store the sampled voltage levels at different times, respectively. According to the simulations using 28nm CMOS technology with 128 by 128 SOT-MRAM array, the proposed DDDR approach achieves a 243mV of sensing margin under 6.08E-8 bit-error-rate (BER) at 1.76ns, which is 2X larger margin with more than 100 times lower BER compared to the conventional read scheme. When scaling down the pre-charge voltage, the proposed scheme achieves more than 50% of the read energy savings under 1E-5 target BER condition.
Files in This Item
There are no files associated with this item.
Appears in
Collections
College of Engineering > School of Electrical Engineering > 1. Journal Articles

qrcode

Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher Park, Jong sun photo

Park, Jong sun
공과대학 (전기전자공학부)
Read more

Altmetrics

Total Views & Downloads

BROWSE