High-aspect-ratio oxide etching using CF4/C6F12O plasma in an inductively coupled plasma etching system with low-frequency bias power
DC Field | Value | Language |
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dc.contributor.author | Kim, Jinhyuk | - |
dc.contributor.author | Choi, Gilyoung | - |
dc.contributor.author | Kwon, Kwang-Ho | - |
dc.date.accessioned | 2022-12-11T21:40:59Z | - |
dc.date.available | 2022-12-11T21:40:59Z | - |
dc.date.created | 2022-12-08 | - |
dc.date.issued | 2022 | - |
dc.identifier.issn | 1612-8850 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/147095 | - |
dc.description.abstract | High-aspect-ratio (HAR) etch of SiO2 films was attempted using a low-frequency (2 MHz) bias power in an inductively coupled plasma (ICP) system using heptafluoroisopropyl pentafluoroethyl ketone (C6F12O) gas, which has a lower global warming potential (GWP). Etching characteristics of the oxide film according to changes such as the CF4/C6F12O mixing ratio, source power (13.56 MHz), and bias power were derived. To understand the etching characteristics and mechanism, optical emission spectroscopy (OES), double Langmuir probe (DLP) measurement, and X-ray photoelectron spectroscopy (XPS) analysis were performed. We observed the vertically etched profile of the 100 nm etched line pattern with a scanning electron microscope (SEM) and at first suggested that the HAR oxide etching process is feasible using the ICP system. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.subject | AMORPHOUS-CARBON MASK | - |
dc.subject | SILICON DIOXIDE | - |
dc.subject | SIO2 | - |
dc.subject | NITRIDE | - |
dc.subject | FILM | - |
dc.title | High-aspect-ratio oxide etching using CF4/C6F12O plasma in an inductively coupled plasma etching system with low-frequency bias power | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kwon, Kwang-Ho | - |
dc.identifier.doi | 10.1002/ppap.202200167 | - |
dc.identifier.scopusid | 2-s2.0-85142625389 | - |
dc.identifier.wosid | 000888430700001 | - |
dc.identifier.bibliographicCitation | PLASMA PROCESSES AND POLYMERS | - |
dc.relation.isPartOf | PLASMA PROCESSES AND POLYMERS | - |
dc.citation.title | PLASMA PROCESSES AND POLYMERS | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Early Access | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalResearchArea | Polymer Science | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Fluids & Plasmas | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.relation.journalWebOfScienceCategory | Polymer Science | - |
dc.subject.keywordPlus | AMORPHOUS-CARBON MASK | - |
dc.subject.keywordPlus | SILICON DIOXIDE | - |
dc.subject.keywordPlus | SIO2 | - |
dc.subject.keywordPlus | NITRIDE | - |
dc.subject.keywordPlus | FILM | - |
dc.subject.keywordAuthor | dry etching | - |
dc.subject.keywordAuthor | Fluorocarbon gases | - |
dc.subject.keywordAuthor | low-frequency bias power | - |
dc.subject.keywordAuthor | low-GWP gas | - |
dc.subject.keywordAuthor | plasma | - |
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