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Development of GaN Epitaxial Process including Air Void to improve Light Extraction Efficiency of Light Emitting Diode
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | BYUN, Dong Jin | - |
| dc.date.accessioned | 2021-08-27T23:46:42Z | - |
| dc.date.available | 2021-08-27T23:46:42Z | - |
| dc.date.created | 2021-04-22 | - |
| dc.date.issued | 2018-05-18 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/19182 | - |
| dc.publisher | 한국재료학회 | - |
| dc.title | Development of GaN Epitaxial Process including Air Void to improve Light Extraction Efficiency of Light Emitting Diode | - |
| dc.title.alternative | Development of GaN Epitaxial Process including Air Void to improve Light Extraction Efficiency of Light Emitting Diode | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | BYUN, Dong Jin | - |
| dc.identifier.bibliographicCitation | 2018년도 학국재료학회 춘계학술대회 | - |
| dc.relation.isPartOf | 2018년도 학국재료학회 춘계학술대회 | - |
| dc.relation.isPartOf | 2018년도 한국재료학회 춘계학술대회 | - |
| dc.citation.title | 2018년도 학국재료학회 춘계학술대회 | - |
| dc.citation.conferencePlace | KO | - |
| dc.citation.conferenceDate | 2018-05-16 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 2 | - |
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