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Development of GaN Epitaxial Process including Air Void to improve Light Extraction Efficiency of Light Emitting DiodeDevelopment of GaN Epitaxial Process including Air Void to improve Light Extraction Efficiency of Light Emitting Diode
- Alternative Title
- Development of GaN Epitaxial Process including Air Void to improve Light Extraction Efficiency of Light Emitting Diode
- Authors
- BYUN, Dong Jin
- Issue Date
- 18-5월-2018
- Publisher
- 한국재료학회
- Citation
- 2018년도 학국재료학회 춘계학술대회
- Conference Name
- 2018년도 학국재료학회 춘계학술대회
- Place
- KO
- Conference Date
- 2018-05-16
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