Gate-tunable silicon oxide memory based on vertically integrated graphene barristor
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Gunuk Wang | - |
dc.date.accessioned | 2021-08-28T02:28:20Z | - |
dc.date.available | 2021-08-28T02:28:20Z | - |
dc.date.created | 2021-04-22 | - |
dc.date.issued | 2017-12-07 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/20728 | - |
dc.publisher | Applied Physics Division, The Korean Physical Society | - |
dc.title | Gate-tunable silicon oxide memory based on vertically integrated graphene barristor | - |
dc.title.alternative | Gate-tunable silicon oxide memory based on vertically integrated graphene barristor | - |
dc.type | Conference | - |
dc.contributor.affiliatedAuthor | Gunuk Wang | - |
dc.identifier.bibliographicCitation | The 10th International Conference on Advanced Materials and Devices (2017) | - |
dc.relation.isPartOf | The 10th International Conference on Advanced Materials and Devices (2017) | - |
dc.relation.isPartOf | ICAMD (2017) 초록집 | - |
dc.citation.title | The 10th International Conference on Advanced Materials and Devices (2017) | - |
dc.citation.conferencePlace | KO | - |
dc.citation.conferenceDate | 2017-12-05 | - |
dc.type.rims | CONF | - |
dc.description.journalClass | 2 | - |
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